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35SGQ030PBF

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 30V V(RRM), Silicon, TO-254AA,
CategoryDiscrete semiconductor    diode   
File Size44KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

35SGQ030PBF Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 35A, 30V V(RRM), Silicon, TO-254AA,

35SGQ030PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-254AA
JESD-30 codeR-MSFM-P3
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current35 A
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PD -94014A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
35SGQ030
35 Amp, 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
300
V
F
@ 35Apk, T
J
=125°C
0.69
A
V
35SGQ030 Units
35
30
A
V
Description/Features
The 35SGQ030 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
T
J
,T
stg
Operating and storage
-55 to 150
°C
.12 ( .005 )
CASE STYLE
3.78 ( .149 )
3.53 ( .139 )
-A -
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
-B -
1.27 ( .050 )
1.02 ( .040 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
LEG EN D
1 - CO LL
2 - E MIT
3 - GA TE
1
2
3
-C -
3X
3.81 ( .150 )
2X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
M C A M B
M C
3.81 ( .150 )
CATHODE OPEN ANODE
IR Case Style TO-254AA
www.irf.com
1
08/14/01

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