HYS72V4120GU-10 datasheet, PDF

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HYS72V4120GU-10: Description3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module; Categorystorage storage; File Size76KB，11 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYS72V4120GU-10 Overview

3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module

HYS72V4120GU-10 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	DIMM
package instruction	,
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	8 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N168
memory density	301989888 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	DUAL

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3.3V 4M x 64-Bit 2 BANK SDRAM Module

3.3V 4M x 72-Bit 2 BANK SDRAM Module

168 pin unbuffered DIMM Modules

HYS64V4120GU-10

HYS72V4120GU-10

•

168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

2 bank 4M x 64, 4M x 72 organisation

Optimized for byte-write non-parity or ECC applications

Fully PC66 layout compatible

JEDEC standard Synchronous DRAMs (SDRAM)

Performance:

-10

Max. Clock frequency

Max. access time from clock

66 MHz @ CL=2

100 MHz @ CL=3

9 ns @ CL=2

8 ns @ CL=3

•

Single +3.3V(± 0.3V ) power supply

Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

Auto Refresh (CBR) and Self Refresh

Decoupling capacitors mounted on substrate

All inputs, outputs are LVTTL compatible

Serial Presence Detect with E

PROM

Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages

4096 refresh cycles every 64 ms

Gold contact pad

Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU

•

Semiconductor Group

2.98

HYS72V4120GU-10 Related Products

	HYS72V4120GU-10	HYS64V4120GU-10	HYS64V4120GU
Description	3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module	3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module	3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module
Maker	SIEMENS	SIEMENS	-
Parts packaging code	DIMM	DIMM	-
Contacts	168	168	-
Reach Compliance Code	unknow	unknown	-
ECCN code	EAR99	EAR99	-
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	-
Maximum access time	8 ns	8 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
JESD-30 code	R-XDMA-N168	R-XDMA-N168	-
memory density	301989888 bi	268435456 bit	-
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-
memory width	72	64	-
Number of functions	1	1	-
Number of ports	1	1	-
Number of terminals	168	168	-
word count	4194304 words	4194304 words	-
character code	4000000	4000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	70 °C	70 °C	-
organize	4MX72	4MX64	-
Output characteristics	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	UNSPECIFIED	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
Certification status	Not Qualified	Not Qualified	-
refresh cycle	4096	4096	-
self refresh	YES	YES	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	-
surface mount	NO	NO	-
technology	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	NO LEAD	-
Terminal location	DUAL	DUAL	-

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