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HZK12BL

Description
12.9 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size24KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZK12BL Overview

12.9 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

HZK12BL Parametric

Parameter NameAttribute value
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW LEAKAGE, LOW ZENER IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage12.9 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance3.88%
Working test current0.5 mA
Base Number Matches1
HZK-L Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power
Supply
ADE-208-127B (Z)
Rev. 2
Features
Low leakage, low zener impedance and maximum power dissipation of 400mW.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
LLD package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HZK-L Series
Mark
Color Code
Package Code
LLD
Outline
Cathode band
1
3rd. band
2nd. band
Cathode band
1
3rd. band
2nd. band
2
2
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note: With P.C. Board.
Symbol
Pd*
Tj
Tstg
Value
400
175
–55 to +175
Unit
mW
°C
°C

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Index Files: 1821  480  1858  1239  121  37  10  38  25  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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