IXFM10N90 datasheet, PDF - EEWORLD Datasheet

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IXFM10N90: Description12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD; Categorysemiconductor Discrete semiconductor; File Size177KB，4 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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IXFM10N90 Overview

12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

IXFM10N90 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	900 V
Processing package description	TO-247AD, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	NOT SPECIFIED
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	12 A
Maximum drain on-resistance	0.9000 ohm
Maximum leakage current pulse	48 A

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HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

, HDMOS

Family

DSS

IXFH/IXFM 10 N90

IXFH/IXFM 12 N90

IXFH/IXFT 13 N90

900 V

D25

10 A

12 A

13 A

DS(on)

1.1

0.9

0.8

Ω

≤

250 ns

TO-247 AD (IXFH)

Symbol

DSS

DGR

GSM

D25

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MΩ

Continuous

Transient

= 25°C

= 25°C,

pulse width limited by T

= 25°C

10N90

12N90

13N90

10N90

12N90

13N90

10N90

12N90

13N90

Maximum Ratings

900

±20

±30

300

-55 ... +150

150

-55 ... +150

V/ns

°C

G = Gate,

S = Source,

D = Drain,

TAB = Drain

C (TAB)

(TAB)

TO-204 AA (IXFM)

TO-268 (IXFT)

dv/dt

stg

Weight

Symbol

= 25°C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150°C, R

= 2

Ω

= 25°C

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

1.13/10 Nm/lb.in.

TO-204 = 18 g, TO-247 = 6 g

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

900

2.0

4.5

±100

= 25°C

= 125°C

1.1

0.9

0.8

µA

Ω

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 3 mA

= V

, I

= 4 mA

±20

, V

= 0

= V

DSS

= 0 V

= 10 V, I

= 0.5 • I

D25

10N90

12N90

13N90

Pulse test, t

≤

300

µs,

duty cycle

≤

2 %

Features

International standard packages

Low R

DS (on)

HDMOS

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic Rectifier

Applications

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Temperature and lighting controls

Low voltage relays

Advantages

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

High power density

DS91530I(01/03)

IXFM10N90 Related Products

	IXFM10N90	IXFH10N90	IXFT13N90
Description	12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Number of terminals	3	3	3
Minimum breakdown voltage	900 V	900 V	900 V
Processing package description	TO-247AD, 3 PIN	TO-247AD, 3 PIN	TO-247AD, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	12 A	12 A	12 A
Maximum drain on-resistance	0.9000 ohm	0.9000 ohm	0.9000 ohm
Maximum leakage current pulse	48 A	48 A	48 A

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