HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH/IXFT 13 N90
900 V
900 V
900 V
I
D25
10 A
12 A
13 A
R
DS(on)
1.1
0.9
0.8
Ω
Ω
Ω
t
rr
≤
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by T
JM
T
C
= 25°C
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
Maximum Ratings
900
900
±20
±30
10
12
13
40
48
52
10
12
13
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
C (TAB)
(TAB)
TO-204 AA (IXFM)
D
G
TO-268 (IXFT)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Symbol
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
900
2.0
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
1
1.1
0.9
0.8
V
V
nA
µA
mA
Ω
Ω
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
10N90
12N90
13N90
Pulse test, t
≤
300
µs,
duty cycle
d
≤
2 %
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DS91530I(01/03)
© 2003 IXYS All rights reserved
IXFH 10N90
IXFM 10N90
Symbol
Test Conditions
IXFH 12N90
IXFM 12N90
IXFH 13N90
IXFT 13N90
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
6
12
4200
S
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1
2
3
pF
pF
pF
50
50
100
50
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
315
90
18
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
Ω
(External)
12
51
18
Dim.
123 155
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
27
49
45
80
0.42
(IXFH/IXFM)
0.25
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
10N90
12N90
13N90
10N90
12N90
13N90
10
12
13
40
48
52
1.5
A
A
A
A
A
A
V
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
2.2
2.6
A
2
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204 AA (IXFM) Outline
I
SM
Repetitive;
pulse width limited by T
JM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
d
≤
2 %
I
F
= I
S
-di/dt = 100 A/µs,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
1
2
10
15
250 n s
400 n s
µC
µC
A
A
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
TO-268 (IXFT) Outline
Millimeter
Min.
Max.
A
6.4
11.4
A1
3.42
∅b
.97
1.09
∅D
22.22
e
10.67 11.17
e1
5.21
5.71
L
∅p
∅p1
q
R
R1
s
7.93
3.84
4.19
3.84
4.19
30.15 BSC
13.33
4.77
16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFH 10N90
IXFM 10N90
Fig. 1. Output Characteristics
20
18
16
14
12
10
8
6
4
2
0
5V
T
J
= 25°C
V
GS
= 10V
7V
6V
IXFH 12N90
IXFM 12N90
Fig. 2. Input Admittance
20
18
16
14
12
10
8
6
4
2
0
T
J
= 25°C
IXFH 13N90
IXFT 13N90
I
D
- Amperes
0
5
10
15
20
I
D
- Amperes
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 3. R
DS(on)
vs. Drain Current
1.5
T
J
= 25°C
2.50
2.25
Fig. 4. Temperature Dependence
of Drain to Source Resistance
1.4
R
DS(on)
- Normalized
R
DS(on)
- Normalized
2.00
1.75
1.50
1.25
1.00
0.75
I
D
= 6A
1.3
1.2
V
GS
= 10V
1.1
V
GS
= 15V
1.0
0.9
0
5
10
15
20
25
0.50
-50
-25
0
25
50
75
100 125 150
I
D
- Amperes
T
J
- Degrees C
Fig. 5. Drain Current vs.
Case Temperature
20
18
16
Fig. 6. Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GS(th)
1.1
BV
DSS
BV/V
G(th)
- Normalized
25
50
75
100 125 150
I
D
- Amperes
14
12
10
8
6
4
2
0
-50
1.0
0.9
0.8
0.7
0.6
12N90
10N90
-25
0
0.5
-50
-25
0
25
50
75
100 125 150
T
C
- Degrees C
T
J
- Degrees C
© 2003 IXYS All rights reserved
IXFH 10N90
IXFM 10N90
IXFH 12N90
IXFM 12N90
IXFH 13N90
IXFT 13N90
Fig.7. Gate Charge Characteristic Curve
10
8
V
DS
= 450V
I
D
= 13A
I
G
= 10mA
V
GE
- Volts
6
4
2
0
0
25
50
75
100
125
150
Gate Charge - nCoulombs
Fig.8. Capacitance Curves
4500
4000
C
iss
18
16
14
f = 1 MHz
V
DS
= 25V
Fig.9. Source Current vs. Source
to Drain Voltage
Capacitance - pF
3500
2500
2000
1500
1000
500
0
0
5
C
oss
C
rss
I
D
- Amperes
3000
12
10
8
6
4
2
T
J
= 125°C
T
J
= 25°C
10
15
20
25
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
V
SD
- Volts
Fig.10. Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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