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IXFT13N90

Description
12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Categorysemiconductor    Discrete semiconductor   
File Size177KB,4 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFT13N90 Overview

12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

IXFT13N90 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage900 V
Processing package descriptionTO-247AD, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current12 A
Maximum drain on-resistance0.9000 ohm
Maximum leakage current pulse48 A
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 10 N90
IXFH/IXFM 12 N90
IXFH/IXFT 13 N90
900 V
900 V
900 V
I
D25
10 A
12 A
13 A
R
DS(on)
1.1
0.9
0.8
t
rr
250 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by T
JM
T
C
= 25°C
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
Maximum Ratings
900
900
±20
±30
10
12
13
40
48
52
10
12
13
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
C (TAB)
(TAB)
TO-204 AA (IXFM)
D
G
TO-268 (IXFT)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Symbol
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
900
2.0
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
1
1.1
0.9
0.8
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
10N90
12N90
13N90
Pulse test, t
300
µs,
duty cycle
d
2 %
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DS91530I(01/03)
© 2003 IXYS All rights reserved

IXFT13N90 Related Products

IXFT13N90 IXFH10N90 IXFM10N90
Description 12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 12 A, 900 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Number of terminals 3 3 3
Minimum breakdown voltage 900 V 900 V 900 V
Processing package description TO-247AD, 3 PIN TO-247AD, 3 PIN TO-247AD, 3 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 12 A 12 A 12 A
Maximum drain on-resistance 0.9000 ohm 0.9000 ohm 0.9000 ohm
Maximum leakage current pulse 48 A 48 A 48 A
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