Freescale Semiconductor
Technical Data
MW4IC915
Rev. 5, 3/2005
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage
structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N−CDMA and W−CDMA.
Final Application
•
Typical Performance: V
DD
= 26 Volts, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
P
out
= 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
•
Typical GSM/GSM EDGE Performances: V
DD
= 26 Volts, I
DQ1
= 60 mA,
I
DQ2
= 240 mA, P
out
= 3 Watts Avg., Full Frequency Band (869−894 MHz
and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset =
−65
dBc
Spectral Regrowth @ 600 kHz Offset =
−83
dBc
EVM — 1.5%
•
Capable of Handling 5:1 VSWR, @
26
Vdc, 921 MHz,
15
Watts CW
Output Power
•
Characterized with Series Equivalent Large−Signal Impedance Parameters
•
On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
•
On−Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
N Suffix Indicates Lead−Free Terminations
•
200°C Capable Plastic Package
•
Also Available in Gull Wing for Surface Mount
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
RD2
V
RG2
V
DS1
RF
in
V
RD1
V
RG1
V
GS1
V
GS2
V
DS2
/RF
out
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
860
−
960 MHz, 15 W, 26 V
GSM/GSM EDGE, N−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329−09
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A−03
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
GND
V
RD2
V
RG2
V
DS1
V
RD1
RF
in
V
RG1
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out/
V
DS2
13
12
NC
GND
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
−
AN1987.
©
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
−0.5.
+65
−0.5.
+15
−65
to +175
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 15 W CW)
GSM EDGE Application
(P
out
= 7.5 W CW)
CDMA Application
(P
out
= 3.75 W CW)
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Stage 1, 26 Vdc, I
DQ
= 60 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Symbol
R
θJC
7.3
1.7
7.3
1.8
7.4
1.9
Value
(1)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22−A113, IPC/JEDEC J−STD−020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DS
= 26 Vdc, I
DQ1
= 90 mA, I
DQ2
= 240 mA, P
out
= 15 W PEP,
f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two−Tone
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
PAE
IMD
IRL
29
29
—
—
31
31
−40
−15
—
—
−29
−10
dB
%
dBc
dB
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
−
AN1955.
(continued)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued )
Characteristic
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors (−10 to 85°C)
(1)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 3 W CW
Deviation from Linear Phase in 40 MHz Bandwidth @ P
out
= 3 W CW
Delay @ P
out
= 3 W CW Including Output Matching
Part−to−Part Phase Variation @ P
out
= 3 W CW
Symbol
Min
—
—
—
—
—
Typ
Max
—
—
—
—
—
Unit
%
dB
°
ns
°
Typical Performances
(In Freescale Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA, 869 MHz<Frequency>960 MHz
∆I
QT
G
F
Φ
Delay
∆Φ
±5
0.2
±0.6
2.5
±15
Typical GSM/GSM EDGE Performances
(In Freescale Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
869 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
Power Gain @ P
out
= 15 W CW
Power Added Efficiency @ P
out
= 15 W CW
Input Return Loss @ P
out
= 15 W CW
Error Vector Magnitude @ P
out
= 3 W Avg. including
0.6% rms source EVM
Spectral Regrowth at 400 kHz Offset @ P
out
= 3 W Avg.
Spectral Regrowth at 600 kHz Offset @ P
out
= 3 W Avg.
P1dB
G
ps
PAE
IRL
EVM
SR1
SR2
—
—
—
—
—
—
—
20
30
44
−15
1.5
−65
−83
—
—
—
—
—
—
—
Watts
dB
%
dB
% rms
dBc
dBc
1. Refer to AN1977/D,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
−
AN1977.
NOTE
−
CAUTION
−
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
3
L1
V
DS1
+
RF
INPUT
C1
Z1
R1
+
C6
V
GS2
R2
+
C9
C8
C7
C5
C4
C2
C3
1
2
3
4
5
6
7
8
9
10 NC
11
16
NC 15
+
C10 C11
C15
+
C14
V
DS2
14
Z2
Z3
C12
C13
Z4
M1
Z5
M2
Z6
M4
Z7
M3
Z8
C16
Z9
RF
OUTPUT
V
GS1
NC 13
Quiescent Current
Temperature Compensation
12
Z1
Z2
Z3
Z4
Z5
0.086″, 50
W
Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
Figure 3. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Designations and Values
Part
C1, C6, C9, C14
C2, C5, C8, C11
C3, C4, C7, C10, C16
C12, C13
C15
L1
M1, M2, M3, M4
R1, R2
Description
22
mF,
35 V Tantalum Chip Capacitors
1000 pF Chip Capacitors
22 pF Chip Capacitors
10 pF Chip Capacitors
10
mF
Tantalum Chip Capacitor
12.5 nH Inductor
0.283″, 90_ Mitered Microstrip Bends
10 kΩ, 1/4 W Chip Resistor (1206)
Part Number
TAJE226M035R
100B102JCA500X
100B220JCA500X
100B100JCA500X
T491X226K035AS4394
Manufacturer
AVX
ATC
ATC
ATC
Kemet
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
4
RF Device Data
Freescale Semiconductor
C1
V
DS1
C2
C3
C10
L1
C12
C13
C11
MW4IC915MB
Rev 0
V
DS2
C14
C15
C16
C5
C4
C7
C6
R1
V
GS1
C8
C9
V
GS2
R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Layout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
RF Device Data
Freescale Semiconductor
5
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