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IRLR3717

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size266KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRLR3717 Overview

HEXFET Power MOSFET

IRLR3717 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionDPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)460 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)120 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)460 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95776A
IRLR3717PbF
IRLU3717PbF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
20V
4.0m
:
Qg
21nC
D-Pak
IRLR3717
I-Pak
IRLU3717
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
120
Units
V
A
™
f
81
f
460
89
44
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
W
0.59
-55 to + 175
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.69
50
110
Units
°C/W
–––
–––
–––
Notes

through
…
are on page 11
www.irf.com
1
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Index Files: 1210  1626  2891  1207  1977  25  33  59  40  12 
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