DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
(Ta = 25°C)
P
T
(Tc = 25°C)
T
j
T
stg
2SB548/
2SD414
−80/80
2SB549/
2SD415
−100/100
Unit
V
V
V
A
A
W
W
°C
°C
Electrode Connection
−100/120
−5.0/5.0
−0.8/0.8
−1.5/1.5
1.0
10
150
−55
to +150
* PW
≤
10 ms, duty cycle
≤
50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
=
−80/80
V, I
E
= 0
V
EB
=
−3.0/3.0
V, I
C
= 0
V
CE
=
−5.0/5.0
V, I
C
=
−2.0/2.0
mA*
V
CE
=
−5.0/5.0
V, I
C
=
−200/200
mA*
I
C
=
−500/500
mA, I
B
=
−50/50
mA*
I
C
=
−500/500
mA, I
B
=
−50/50
mA*
V
CE
=
−5.0/5.0
V, I
C
=
−100/100
mA
V
CB
=
−10/10
V, I
E
= 0, f = 1.0 MHz
20
40
90
−0.4/0.3
−0.9/0.9
70/45
25/15
320
−2.0/2.0
−1.5/1.5
V
V
MHz
pF
MIN.
TYP.
MAX.
−1.0/1.0
−1.0/1.0
Unit
µ
A
µ
A
*
Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE2
CLASSIFICATION
Marking
h
FE2
S
40 to 80
R
60 to 120
Q
100 to 200
P
160 to 320
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Note
Total Power Dissipation P
T
(W)
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
Derating dT (%)
Case Temperature Tc (°C)
Collector Current I
C
(A)
Note
1. Tc = 25
°C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
Collector Current I
C
(A)
Note
1. Tc = 25
°C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance
∆
R
th
(
°
C/W)
Collector Current I
C
(A)
Pulse Width PW (ms)
Collector to Emitter Voltage V
CE
(V)
2
Data Sheet D16141EJ2V0DS
2SB548, 549/2SD414, 415
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
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•
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•
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