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IRHM7260

Description
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)
CategoryDiscrete semiconductor    The transistor   
File Size265KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHM7260 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)

IRHM7260 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-CSFM-P3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED; RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-CSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 91332D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE ( T0-254AA)
Product Summary
Part Number
IRHM7260
IRHM3260
IRHM4260
IRHM8260
Radiation Level R
DS(on)
100K Rads (Si) 0.070Ω
300K Rads (Si) 0.070Ω
600K Rads (Si) 0.070Ω
1000K Rads (Si) 0.070Ω
I
D
35*A
35*A
35*A
35*A
REF: MIL-PRF-19500/663
®
RAD Hard HEXFET
TECHNOLOGY
™
IRHM7260
JANSR2N7433
200V, N-CHANNEL
QPL Part Number
JANSR2N7433
JANSF2N7433
JANSG2N7433
JANSH2N7433
TO-254AA
International Rectifier’s RADHard
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
HEXFET
®
technol-
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
*Current limited by pin diameter
For footnotes refer to the last page
35*
25
161
250
2.0
±20
500
35
25
5.7
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
g
www.irf.com
1
8/14/01

IRHM7260 Related Products

IRHM7260 IRHM3260 IRHM4260 IRHM8260
Description RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Parts packaging code TO-254AA TO-254AA TO-254AA TO-254AA
package instruction FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3 FLANGE MOUNT, S-CSFM-P3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V 200 V
Maximum drain current (ID) 35 A 35 A 35 A 35 A
Maximum drain-source on-resistance 0.077 Ω 0.077 Ω 0.077 Ω 0.077 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-CSFM-P3 S-CSFM-P3 S-CSFM-P3 S-CSFM-P3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 140 A 140 A 140 A 140 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )
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