32,768 word by 8-bit static RAMs. They are fabricated using
ISSI
's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields access times as fast as 10 ns maximum.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250
µW
(typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE
) input and an active LOW Output Enable (
OE
)
input. The active LOW Write Enable (
WE
) controls both writing
and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8 SRAMs
and are available in 28-pin PDIP, SOJ, and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
[i=s] This post was last edited by woaixiaxiao on 2021-1-10 22:28 [/i]TencentOS-tiny system transplantation
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