5961-01-335-4412 datasheet, PDF

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5961-01-335-4412: DescriptionZener Diode, 4.7V V(Z), 1.5W; CategoryDiscrete semiconductor diode; File Size218KB，22 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5961-01-335-4412 Overview

Zener Diode, 4.7V V(Z), 1.5W

5961-01-335-4412 Parametric

Parameter Name	Attribute value
Maker	Microsemi
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode type	ZENER DIODE
Maximum dynamic impedance	8 Ω
Number of components	1
Maximum operating temperature	175 °C
Maximum power dissipation	1.5 W
Nominal reference voltage	4.7 V
surface mount	NO
Working test current	53 mA
Base Number Matches	1

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 23 September 2006.

INCH-POUND

MIL-PRF-19500/406G

23 June 2006

SUPERSEDING

MIL-PRF-19500/406F

24 November 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N4460, 1N4460C, 1N4460D THROUGH 1N4496, 1N4496C, 1N4496D, AND

1N6485, 1N6485C, 1N6485D THROUGH 1N6491, 1N6491C, 1N6491D,

1N4460US, 1N4460CUS, 1N4460DUS THROUGH 1N4496US, 1N4496CUS, 1N4496DUS, AND

1N6485US, 1N6485CUS, 1N6485DUS THROUGH 1N6491US, 1N6491CUS, 1N6491DUS,

PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

SCOPE

1.1 Scope. This specification covers the performance requirements for microminiature 1.5 watt silicon, low

leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product

assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to DO-41), and figure 2 (surface mount).

* 1.3 Maximum ratings. T

STG

= T

J(MAX)

= -65C to +175C. Maximum ratings are as shown in maximum and primary

test ratings (see 3.11) herein and as follows:

+112°C

L = .375

inch

(9.53

mm)

+145°C

T(PCB1)

=+55°C

T(PCB2)

=+55°C

θJL

0.375

inch

(9.52

mm)

θJEC

θJA(PCB1)

θJA(PCB2)

Barometric

pressure

reduced

(high

altitude

operation)

(1)

(2)

(3)

(4)

1.5 W (1) 1.5 W (2)

0.6 W (3)

1.5 W (4)

8 mm Hg

42°C/W

20°C/W 200°C/W

80°C/W

Derate: See figure 3 herein.

Derate: See figure 4 herein.

Derate: See figure 5 herein. For PCB ratings on all surface mount (US) devices, the pads = .067 inch (1.70

mm) x .105 inch (2.67 mm); For the axial-leaded devices, the pads (axial) = .092 inch (2.34 mm) diameter, strip

= .030 inch (7.62 mm) x 1 inch (25.4 mm) long, axial lead length L

≤

.187 inch (≤ 4.76 mm).

Derate: See figure 6 herein. For PCB ratings on all surface mount (US) devices, the pads = .500 inch (12.70

mm) x .500 inch (12.7 mm) or the equivalent of .250 square inches in area each. For the axial-leaded devices,

the pads (axial) = .092 inch (2.34 mm) diameter, strip = .030 inch (7.62 mm) x 1 inch (25.4 mm) long, axial lead

length L

≤

.187 inch (≤ 4.76 mm). For the axial-leaded devices, the pads are also of the same equivalent area

as described for the surface mount US devices.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at

http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

MIL-PRF-19500/406G

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum and primary test

ratings (see 3.11) and as follows:

3.3 V dc

≤

200 V dc (nominal).

1N4460D through 1N4496D and 1N6485D through 1N6491D are 1 percent voltage tolerance.

1N4460C through 1N4496C and 1N6485C through 1N6491C are 2 percent voltage tolerance.

1N4460 through 1N4496 and 1N6485 through 1N6491 are 5 percent voltage tolerance.

= 42°C/W (max) at L = .375 inch (9.52 mm) (nonsurface mount).

JEC

= 20°C/W (max) (surface mount).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil.

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying

activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3).

MIL-PRF-19500/406G

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500, and as follows:

EC .............. End-cap.

US ............. Surface mount case outline, square end-cap.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figures 1 and 2 herein.

3.4.1 Diode construction. These devices shall be constructed utilizing the requirements of MIL-PRF-19500 and as

follows.

3.4.1.1 Metallurgical bond for diodes with V

greater than 6.8 V dc. Category I metallurgical bonds for diodes with

greater than 6.8 V dc as defined in MIL-PRF-19500 shall be utilized.

3.4.1.2 Metallurgical bond for diodes with V

less than or equal to 6.8 V dc. Category I or category III metallurgical

bonds as defined in MIL-PRF-19500.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Marking of US version devices. For US version devices only, all marking may be omitted from the device

except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of

the initial container.

3.6 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

When solder alloy is used for lead finish the maximum lead temperature shall be 175°C max. Where a choice of lead

finish is desired, it shall be specified in the acquisition document (see 6.2).

3.7 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.

Alternatively, for US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the

cathode end may be used.

3.8 Selection of tighter tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, JANTXV,

or JANS devices, which have successfully completed all applicable screening, and groups A, B, and C testing as

±5

percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2, at tightened tolerances.

Tighter tolerances for mounting clip temperature shall be maintained for reference purposes to establish correlation.

For C and D tolerance levels, T

= 25°C +1°C, -3°C at .375 inch (9.53 mm) from body or equivalent.

3.9 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, table I, and table II herein.

3.10 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.11 Maximum and primary test ratings. Maximum and primary test ratings for voltage regulator diodes are specified

in table III herein.

3.12 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

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