DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (V
CE
= 5 V).
This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface
mount type plastic package, power minimold (SOT-89).
FEATURES
• Low distortion, low voltage: IM
2
= 55 dBc TYP., IM
3
= 76 dBc TYP. @ V
CE
= 5 V, I
C
= 50 mA, V
in
= 105 dB
µ
V/75Ω
• Large P
tot
: P
tot
= 1.8 W (Mounted on double-sided copper-clad 16 cm
2
×
0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
2SC4703
2SC4703-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
25
12
2.5
150
1.8
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
2
Note
Mounted on double-sided copper-clad 16 cm
×
0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10339EJ01V0DS (1st edition)
(Previous No. P10375EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1994, 2003
2SC4703
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Collector Capacitance
2nd Order Intermoduration Distortion
f
T
S
21e
2
S
21e
2
NF
C
ob
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 20 V, I
E
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 5 V, I
C
= 50 mA
–
–
50
–
–
–
1.5
1.5
250
µ
A
µ
A
–
V
CE
= 5 V, I
C
= 50 mA
V
CE
= 5 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 50 mA, f = 1 GHz
V
CB
= 5 V, I
E
= 0 mA, f = 1 MHz
I
C
= 50 mA,
V
O
= 105 dB
µ
V/75
Ω,
f = 190
−
90 MHz
I
C
= 50 mA,
V
O
= 105 dB
µ
V/75
Ω,
f = 2
×
190
−
200 MHz
V
CE
= 5 V
V
CE
= 10 V
V
CE
= 5 V
V
CE
= 10 V
–
6.5
–
–
–
–
6.0
8.3
8.5
2.3
1.5
55
63
–
–
–
3.5
2.5
–
–
–
–
GHz
dB
dB
dB
pF
dBc
IM
2
3rd Order Intermoduration Distortion
IM
3
–
–
76
81
dBc
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
SH
SH
50 to 100
SF
SF
80 to 160
SE
SE
125 to 250
2
Data Sheet PU10339EJ01V0DS
2SC4703
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2 500
Total Power Dissipation P
tot
(mW)
Output Capacitance C
ob
(pF)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5
f = 1 MHz
2 000
1 800
Ceramic Substrate
16 cm
2
×
0.7 mm (t)
R
th (j-a)
62.5˚C/W
2
1 500
1
1 000
Free Air
R
th (j-a)
312.5˚C/W
0.5
500
400
0
25
50
75
100
125
150
0.2
0.1 0.2 0.3 0.5
1
2 3
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
120
100
80
60
40
20
I
B
= 0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
Collector Current I
C
(mA)
100
V
CE
= 10 V
5V
10
1
0.1
0.2
Collector Current I
C
(mA)
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
10
9
8
7
6
5
4
5V
f = 1 GHz
V
CE
= 10 V
DC Current Gain h
FE
V
CE
= 10 V
100
50
5V
10
0.1
1
10
100
1 000
1
2
5 7 10
20
50 70100
200
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10339EJ01V0DS
3
2SC4703
NOISE FIGURE vs.
COLLECTOR CURRENT
5
4
Noise Figure NF (dB)
2nd Order Intermodulation Distortion IM
2
(dBc)
IM
2
vs. COLLECTOR CURRENT
70
V
O
= 105 dB
µ
V/75
Ω
f = 190 – 90 MHz
V
CE
= 5 V
f = 1 GHz
3
60
2
V
CE
= 10 V
50
5V
40
10
20
50
100
200
1
2
5
10
20
50
100
200
Collector Current I
C
(mA)
Collector Current I
C
(mA)
3rd Order Intermodulation Distortion IM
3
(dBc)
IM
3
vs. COLLECTOR CURRENT
90
V
O
= 105 dB
µ
V/75
Ω
f = 2
×
190 – 200 MHz
80
V
CE
= 10 V
70
60
5V
50
10
20
50
100
200
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10339EJ01V0DS
Talking
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