DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4957
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Reverse Transfer Capacitance
C
re
= 0.3 pF TYP.
• 4-pin minimold Package
ORDERING INFORMATION
Part Number
2SC4957
2SC4957-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
6
2
30
180
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10520EJ01V0DS (1st edition)
(Previous No. P10379EJ2V0DS00)
Date Published September 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1993, 2004
2SC4957
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 10 mA
−
−
75
−
−
−
100
100
150
nA
nA
−
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1.0 MHz
−
9
−
−
12
11
1.5
0.3
–
−
2.5
0.5
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
T83
T83
75 to 150
2
Data Sheet PU10520EJ01V0DS
2SC4957
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MH
Z
0.4
Free Air
200
180 mW
0.3
100
0.2
0
50
100
150
0.1
0.5
1
2
5
10
20
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
60
V
CE
= 3 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500
µ
A
50
40
30
200
µ
A
20
10
I
B
= 100
µ
A
400
µ
A
300
µ
A
Collector Current I
C
(mA)
40
30
20
10
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
12
10
8
6
4
2
0.5
f = 2 GH
Z
V
CE
= 5 V
V
CE
= 3 V
DC Current Gain h
FE
V
CE
= 5 V
V
CE
= 3 V
100
V
CE
= 1 V
0
0.1 0.2
0.5
1
2
5
10 20
50 100
1
2
5
10
20
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10520EJ01V0DS
3
2SC4957
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
12
Insertion Power Gain |S
21e
|
2
(dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
4
f = 2 GH
Z
V
CE
= 3 V
Noise Figure NF (dB)
f = 2 GH
Z
V
CE
= 3 V
10
V
CE
= 5 V
3
8
V
CE
= 1 V
6
2
1
4
1
2
5
10
20
50
Collector Current I
C
(mA)
0
0.5
1
2
5
10
20
50
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10520EJ01V0DS
2SC4957
PACKAGE DIMENSIONS
4-PIN MINIMOLD PACKAGE (UNIT: mm)
2.8
+0.2
–0.3
0.4
+0.1
–0.05
0.4
+0.1
–0.05
3
4
1.5
+0.2
–0.1
0.95
2
T83
2.9±0.2
(1.8)
0.85
1
0.6
+0.1
–0.06
5˚
5˚
5˚
0 to 0.1
5˚
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0.16
+0.1
–0.06
1.1
+0.2
–0.1
0.8
0.4
+0.1
–0.05
(1.9)
Data Sheet PU10520EJ01V0DS
5
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