ISL9R460P2, ISL9R460S2, ISL9R460S3S
July 2003
ISL9R460P2, ISL9R460S2, ISL9R460S3S
4A, 600V Stealth™ Diode
General Description
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(I
RRM
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49408.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 20ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AC
ANODE
CATHODE
Symbol
JEDEC STYLE TO-262
JEDEC TO-263AB
K
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
A
CATHODE
(FLANGE)
N/C
ANODE
Device Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
T
C
= 25°C unless otherwise noted
Ratings
600
600
600
4
8
50
58
10
-55 to 175
300
260
Units
V
V
V
A
A
A
W
mJ
°C
°C
°C
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 155°C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
ISL9R460P2, ISL9R460S2, ISL9R460S3S
Package Marking and Ordering Information
Device Marking
R460P2
R460S2
R460S3S
R460S3S
Device
ISL9R460P2
ISL9R460S2
ISL9R460S3S
ISL9R460S3ST
Package
TO-220AC
TO-262
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
50
50
50
800
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 4A
T
C
= 25°C
T
C
= 125°C
-
-
2.0
1.6
2.4
2.0
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
19
-
pF
Switching Characteristics
t
rr
t
rr
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
dI
M
/dt
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Maximum di/dt during t
b
I
F
= 1A, d
IF
/dt = 100A/µs, V
R
= 30V
I
F
= 4A, d
IF
/dt = 100A/µs, V
R
= 30V
I
F
= 4A,
d
IF
/dt = 200A/µs,
V
R
= 390V, T
C
= 25°C
I
F
= 4A,
d
IF
/dt = 200A/µs,
V
R
= 390V,
T
C
= 125°C
I
F
= 4A,
d
IF
/dt = 400A/µs,
V
R
= 390V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
17
19
17
2.6
22
77
4.2
2.8
100
54
3.5
4.3
110
500
20
22
-
-
-
-
-
-
-
-
-
-
-
-
A
nC
A/µs
A
nC
ns
ns
ns
ns
A
nC
ns
Thermal Characteristics
R
θJC
R
θJA
R
θJA
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
-
-
-
-
-
2.6
62
62
62
°C/W
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
ISL9R460P2, ISL9R460S2, ISL9R460S3S
Typical Performance Curves
8
7
I
F
, FORWARD CURRENT (A)
6
5
4
100
o
C
3
2
1
0
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.1
100
150
o
C
600
175
o
C
175
o
C
25
o
C
100
150
o
C
125
o
C
10
100
o
C
I
R
, REVERSE CURRENT (µA)
75
o
C
1
25
o
C
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
Figure 1.
Forward Current vs Forward Voltage
90
V
R
= 390V, T
J
= 125
o
C
80
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
70
t, RECOVERY TIMES (ns)
60
50
40
30
20
10
0
1
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
2
3
4
5
6
7
8
Figure 2.
Reverse Current vs Reverse Voltage
120
V
R
= 390V, T
J
= 125
o
C
100
t, RECOVERY TIMES (ns)
t
b
AT I
F
= 8A, 4A, 2A
80
60
40
t
a
AT I
F
= 8A, 4A, 2A
20
0
100
200
300
400
500
600
700
800
900
1000
I
F
, FORWARD CURRENT (A)
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3.
t
a
and t
b
Curves vs Forward Current
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
V
R
= 390V, T
J
= 125
o
C
7
dI
F
/dt = 800A/µs
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
8
8
Figure 4.
t
a
and t
b
Curves vs dI
F
/dt
V
R
= 390V, T
J
= 125
o
C
7
6
I
F
= 4A
5
4
3
2
1
100
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
I
F
= 2A
I
F
= 8A
6
5
dI
F
/dt = 500A/µs
4
3
dI
F
/dt = 200A/µs
2
1
2
3
4
5
6
7
8
I
F
, FORWARD CURRENT (A)
Figure 5.
Maximum Reverse Recovery Current vs
Forward Current
Figure 6.
Maximum Reverse Recovery Current vs
dI
F
/dt
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
ISL9R460P2, ISL9R460S2, ISL9R460S3S
Typical Performance Curves
(Continued)
6
S, REVERSE RECOVERY SOFTNESS FACTOR
Q
RR
, REVERSE RECOVERY CHARGE (nC)
V
R
= 390V, T
J
= 125
o
C
5
180
V
R
= 390V, T
J
= 125
o
C
160
I
F
= 8A
4
I
F
= 4A
I
F
= 8A
140
I
F
= 4A
120
3
I
F
= 2A
2
100
I
F
= 2A
80
1
100
200
300
400
500
600
700
800
900
1000
60
100
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7.
Reverse Recovery Softness Factor vs
dI
F
/dt
1800
1600
C
J
, JUNCTION CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0.03
Figure 8.
Reverse Recovery Charge vs dI
F
/dt
5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
4
3
2
1
0
0.1
1.0
10
100
150
155
160
165
170
175
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (
O
C)
Figure 9.
Junction Capacitance vs Reverse Voltage
Figure 10.
DC Current Derating Curve
1.0
Z
q
JA
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
0.01
10
-5
10
-4
Figure 11.
Normalized Maximum Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
ISL9R460P2, ISL9R460S2, ISL9R460S3S
Test Circuit and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
I
F
DUT
R
G
CURRENT
SENSE
+
MOSFET
V
DD
0
0.25 I
RM
I
RM
dI
F
dt
t
a
t
rr
t
b
V
GE
t
1
t
2
-
Figure 12. It
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
I = 0.5A
L = 80mH
R < 0.1Ω
V
DD
= 200V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
京公网安备 11010802033920号
EEWORLD
