$GYDQFHG 3RZHU 026)(7
FEATURES
♦
Avalanche Rugged Technology
♦
Rugged Gate Oxide Technology
♦
Lower Input Capacitance
♦
Improved Gate Charge
♦
Extended Safe Operating Area
♦
Lower Leakage Current: 10µA (Max.) @ V
DS
= 250V
♦
Lower R
DS(ON)
: 1.393Ω (Typ.)
1
3
IRF614S
BV
DSS
= 250 V
R
DS(on)
= 2.0
Ω
I
D
= 2.8 A
D
2
-PAK
2
I
2
-PAK
1
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25°C) *
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
250
2.8
1.8
8.5
±30
49
2.8
4
4.8
3.1
40
0.32
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.14
40
62.5
°C/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF614S
Electrical Characteristics
(T
C
=25°C unless otherwise specified)
Symbol
BV
DSS
∆BV/∆T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Min. Typ. Max. Units
250
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.29
--
--
--
--
--
--
1.59
180
35
14
10
11
22
14
8.5
1.8
3.9
--
--
4.0
100
-100
10
100
2.0
--
230
43
18
30
30
55
40
12
--
--
nC
ns
pF
µA
Ω
Ω
V
V
nA
1&+$11(/
32:(5 026)(7
Test Condition
V
GS
=0V,I
D
=250µA
V/°C I
D
=250µA
V
GS
=30V
V
GS
=-30V
V
DS
=250V
See Fig 7
V
DS
=5V,I
D
=250µA
V
DS
=200V,T
C
=125°C
V
GS
=10V,I
D
=1.4A
V
DS
=40V,I
D
=1.4A
(4)
(4)
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=125V,I
D
=2.8A,
R
G
=24Ω
See Fig 13
V
DS
=200V,V
GS
=10V,
I
D
=2.8A
(4) (5)
See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(1)
(4)
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
112
0.35
2.8
8.5
1.5
--
--
A
V
ns
µC
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25°C,I
S
=2.8A,V
GS
=0V
T
J
=25°C,I
F
=2.8A
di
F
/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=10mH, I
AS
=2.8A, V
DD
=50V, R
G
=27
Ω
, Starting T
J
=25°C
(3) I
SD
≤
2.8A, di/dt
≤
130A/µs, V
DD
≤
BV
DSS
, Starting T
J
=25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
V
GS
Top :
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
IRF614S
Fig 2. Transfer Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1
0
0
1
0
0
1 0
o
C
5
1
-1
0
2
o
C
5
1
0
-1
@ Nt s:
oe
1 2 0
µ
s P l e T s
. 5
us et
2 T = 2
o
C
.
C
5
1
-1
0
1
0
0
1
1
0
- 5
o
C
5
1
-2
0
2
4
6
@N ts :
oe
1 V =0 V
.
GS
2 V =4 V
.
DS
0
3 2 0
µ
s P l e T s
. 5
us et
8
1
0
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
4
Fig 4. Source-Drain Diode Forward Voltage
I
DR
, R rs D in Cu ent [A]
eve e ra
rr
R
DS(on)
, [
Ω
]
Dr Sour O sis e
ain- ce n-Re tanc
3
V =1 V
0
GS
1
0
0
2
1
-1
0
@N ts :
oe
1 V =0 V
.
GS
2 2 0
µ
s P l e T s
. 5
us et
08
.
10
.
12
.
14
.
1
V =2 V
0
GS
@ N t : T = 2
o
C
oe
J
5
0
0
2
D
10 C
5
2
o
C
5
1
0
-2
o
4
6
8
1
0
02
.
04
.
06
.
I , Dra C nt [A]
in urre
V
SD
, S ce ai Vol ge [
our -Dr n ta
V]
Fig 6. Gate Charge vs. Gate-Source Voltage
V =5 V
0
DS
V =1 5V
2
DS
V =2 0V
0
DS
Fig 5. Capacitance vs. Drain-Source Voltage
30
0
C = C + C (C = so td )
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
20
0
1
0
V
GS
, Gate-Source Voltage [V]
C
iss
Capacitance [pF]
C
oss
10
0
C
rss
@ Nt s:
oe
1 V =0 V
.
GS
2 f =1 M z
.
H
5
@N ts :I =2 8A
oe
.
D
0
0
2
4
6
8
1
0
0
0
1
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
IRF614S
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
1&+$11(/
32:(5 026)(7
Fig 8. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
20
.
10
.
15
.
10
.
@N ts :
oe
1 V =1 V
.
GS
0
2 I =1 4A
.
D
.
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
09
.
@ Nt s:
oe
1 V =0 V
.
GS
2 I = 2 0
µ
A
.
D
5
-0
5
-5
2
0
2
5
5
0
7
5
10
0
o
05
.
08
.
-5
7
15
2
10
5
15
7
00
.
-5
7
15
2
10
5
15
7
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
O ea in i T i Ae
pr to n hs ra
i L m t d b R
DS(on)
s i ie y
1 0
µ
s
0
1m
s
1 m
0 s
1
0
0
D
C
Fig 10. Max. Drain Current vs. Case Temperature
30
.
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1
1
0
25
.
20
.
15
.
10
.
1
-1
0
@ Nt s:
oe
1 T = 2
o
C
.
C
5
2 T = 1 0
o
C
.
J
5
3 Sn l P le
. ig e u s
05
.
1
-2 0
0
1
0
1
1
0
1
2
0
00
.
2
5
5
0
7
5
10
0
15
2
10
5
V
DS
, Drain-Source Voltage [V]
T
c
, Case Temperature
[
o
C]
Fig 11. Thermal Response
Thermal Response
D=0.5
10
0
0.2
0.1
0.05
10
- 1
0.02
0.01
@ Notes :
1. Z
θ
J C
(t)=3.14
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
DM
*Z
θ
JC
(t)
single pulse
P
DM
t
1
t
2
Z
JC
(t) ,
θ
10
- 2 - 5
10
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
1&+$11(/
32:(5 026)(7
Fig 12. Gate Charge Test Circuit & Waveform
IRF614S
Current Regulator
50kΩ
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
10V
V
DS
V
GS
DUT
3mA
Q
gs
Q
gd
R
1
Current Sampling (I
G
)
Resistor
R
2
Current Sampling (I
D
)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
R
L
V
out
V
in
R
G
DUT
V
in
10V
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
10%
V
out
V
DD
( 0.5 rated V
DS
)
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
L
V
DS
Vary t
p
to obtain
required peak I
D
BV
DSS
1
---- L
L
I
AS2
--------------------
E
AS
=
2
BV
DSS
-- V
DD
BV
DSS
I
AS
C
V
DD
V
DD
t
p
I
D
R
G
DUT
10V
t
p
I
D
(t)
V
DS
(t)
Time
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