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K4D64163HF

Description
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
File Size162KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4D64163HF Overview

1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM

K4D64163HF
64M DDR SDRAM
64Mbit DDR SDRAM
1M x 16Bit x 4 Banks
Double Data Rate Synchronous DRAM
Revision 1.1
August 2002
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev. 1.1(Aug. 2002)

K4D64163HF Related Products

K4D64163HF K4D64163HF-TC33 K4D64163HF-TC40 K4D64163HF-TC36 K4D64163HF-TC50
Description 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
Is it Rohs certified? - incompatible incompatible incompatible incompatible
Maker - SAMSUNG SAMSUNG SAMSUNG -
Parts packaging code - TSOP2 TSOP2 TSOP2 TSOP2
package instruction - TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46
Contacts - 66 66 66 66
Reach Compliance Code - compli compli compli compli
ECCN code - EAR99 EAR99 EAR99 EAR99
access mode - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time - 0.6 ns 0.6 ns 0.6 ns 0.7 ns
Other features - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) - 300 MHz 250 MHz 275 MHz 200 MHz
I/O type - COMMON COMMON COMMON COMMON
interleaved burst length - 2,4,8 2,4,8 2,4,8 2,4,8
JESD-30 code - R-PDSO-G66 R-PDSO-G66 R-PDSO-G66 R-PDSO-G66
JESD-609 code - e0 e0 e0 e0
length - 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density - 67108864 bi 67108864 bi 67108864 bi 67108864 bi
Memory IC Type - DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width - 16 16 16 16
Number of functions - 1 1 1 1
Number of ports - 1 1 1 1
Number of terminals - 66 66 66 66
word count - 4194304 words 4194304 words 4194304 words 4194304 words
character code - 4000000 4000000 4000000 4000000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature - 65 °C 65 °C 65 °C 65 °C
organize - 4MX16 4MX16 4MX16 4MX16
Output characteristics - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TSOP2 TSOP2 TSOP2 TSOP2
Encapsulate equivalent code - TSSOP66,.46 TSSOP66,.46 TSSOP66,.46 TSSOP66,.46
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply - 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle - 4096 4096 4096 4096
Maximum seat height - 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh - YES YES YES YES
Continuous burst length - 2,4,8 2,4,8 2,4,8 2,4,8
Maximum standby current - 0.005 A 0.005 A 0.005 A 0.005 A
Maximum slew rate - 0.39 mA 0.35 mA 0.37 mA 0.32 mA
Maximum supply voltage (Vsup) - 3.465 V 3.465 V 3.465 V 3.465 V
Minimum supply voltage (Vsup) - 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) - 3.3 V 3.3 V 3.3 V 3.3 V
surface mount - YES YES YES YES
technology - CMOS CMOS CMOS CMOS
Temperature level - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal pitch - 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width - 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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