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5082-0112

Description
Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon
CategoryDiscrete semiconductor    diode   
File Size88KB,3 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric Compare View All

5082-0112 Overview

Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon

5082-0112 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHewlett Packard Co.
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFREQUENCY MULTIPLIER
Minimum breakdown voltage35 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance1.55 pF
Nominal diode capacitance1.5 pF
Diode component materialsSILICON
Diode typeSTEP RECOVERY DIODE
frequency bandULTRA HIGH FREQUENCY TO KU BAND
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output frequency26 GHz
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5833 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

5082-0112 Related Products

5082-0112 5082-0180 UV-218.4OHM0.1%
Description Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon Step Recovery Diode, Ultra High Frequency to KU Band, 26GHz Max, Silicon Fixed Resistor, Wire Wound, 2W, 18.4ohm, 0.1% +/-Tol, -20,20ppm/Cel, 4328,
Is it Rohs certified? incompatible incompatible conform to
Reach Compliance Code unknown unknown compliant
ECCN code EAR99 EAR99 EAR99
Number of terminals 2 2 2
Maximum operating temperature 200 °C 200 °C 275 °C
Minimum operating temperature -65 °C -65 °C -55 °C
Package shape ROUND ROUND RECTANGULAR PACKAGE
Package form LONG FORM LONG FORM Radial
Maker Hewlett Packard Co. Hewlett Packard Co. -
package instruction O-LALF-W2 O-LALF-W2 -
application FREQUENCY MULTIPLIER FREQUENCY MULTIPLIER -
Minimum breakdown voltage 35 V 50 V -
Shell connection ISOLATED ISOLATED -
Configuration SINGLE SINGLE -
Maximum diode capacitance 1.55 pF 4.45 pF -
Nominal diode capacitance 1.5 pF 4.4 pF -
Diode component materials SILICON SILICON -
Diode type STEP RECOVERY DIODE STEP RECOVERY DIODE -
frequency band ULTRA HIGH FREQUENCY TO KU BAND ULTRA HIGH FREQUENCY TO KU BAND -
JESD-30 code O-LALF-W2 O-LALF-W2 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Maximum output frequency 26 GHz 26 GHz -
Package body material GLASS GLASS -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Maximum power dissipation 0.5833 W 0.5833 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form WIRE WIRE -
Terminal location AXIAL AXIAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Base Number Matches 1 1 -
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