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MGA-665P8

Description
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier
File Size163KB,14 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
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MGA-665P8 Overview

GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier

Agilent MGA-665P8
GaAs Enhancement-Mode
PHEMT 0.5 – 6 GHz Low Noise
Amplifier
Data Sheet
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Description
Agilent’s MGA-665P8 is an
economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA)
with a unique active-low power-
down function. The LNA has low
noise figure and high gain
achieved through the use of
Agilent Technologies’ proprietary
GaAs Enhancement-mode PHEMT
process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm
8-pin Leadless-Plastic-Chip-
Carrier (LPCC) package. The
compact footprint and low profile
coupled with low noise, high gain
and high linearity makes the
MGA-665P8 an ideal choice as an
LNA for broadband general-
purpose applications. Its excellent
broadband isolation also makes it
a good buffer amplifier.
The output of the MGA-665P8
provides a very good broadband
match to 50
Ω.
Its input requires a
simple external LC network to
provide a low noise figure and
good input return loss. Power
supply voltage is applied to both
the output terminal and a
separate V
D
terminal. A simple
external bias insertion circuit
consisting of a shunt inductor and
a series dc block capacitor is
sufficient to apply power supply
voltage to the output of the MGA-
665P8. The MGA-665P8 provides
typical device performance of
1.45 dB noise figure, 16 dB gain
and an OIP3 of +18.1 dBm at
5.25 GHz, at a bias point of 3 V
and 20.5 mA.
Pin Configuration, Top View
GND PADDLE
Features
• Active-low power-down function
• Single +3 V supply operation
• Low noise and high gain MMIC
• Output 50
match
• Excellent isolation
• Minimal match and external
biasing components
• Housed in miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
Specifications
• 0.5 to 6 GHz operation
• At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
• At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
1: GND
8: UNUSED
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, V
D
, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
2: RF
IN
7: RF
OUT
& V
D
3: GND
6: V
D
4: UNUSED
5: POWERDOWN
Attention:
Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Agilent Application Note A004R:
Electrostatic Discharge, Damage and Control.

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