= 1.65 V to 2.75 V, GND = 0 V, Input Power = 0 dBm, all specifications T
MIN
to T
MAX
, unless otherwise noted
1
Parameter
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
3 dB Frequency
4
Input Power
4
Insertion Loss
Symbol
Conditions
Min
DC
0 V dc bias
0.5 V dc bias
DC to 100 MHz; V
DD
= 2.5 V ± 10%
500 MHz; V
DD
= 2.5 V ± 10%
1000 MHz; V
DD
= 2.5 V ± 10%
100 MHz
500 MHz
1000 MHz
100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
DC to 100 MHz
500 MHz
1000 MHz
50% EN to 90% RF
50% EN to 10% RF
50% Ax to 10% RF
10% to 90% RF
90% to 10% RF
1000 MHz
900 MHz/901 MHz, 4 dBm
B Version
Typ
2
Max
2
2.5
7
16
0.8
0.9
1.5
Unit
GHz
GHz
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
ns
ns
ns
dBm
dBm
mV p-p
V
V
V
V
µA
pF
pF
2.75
1
V
µA
S
21
, S
12
Isolation—RFC to RF1–RF4
S
21
, S
12
Crosstalk
S
21
, S
12
Return Loss (On Channel)
4
S
11
, S
22
Return Loss (Off Channel)
4
S
11
, S
22
69
60
30
64
60
30
21
18
15
18
16
18
On Switching Time
4
Off Switching Time
4
Transition Time
Rise Time
4
Fall Time
4
1 dB Compression
4
Third Order Intermodulation Intercept
Video Feedthrough
5
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
Input Low Voltage
Input Leakage Current
CAPACITANCE
4
RF Port On Capacitance
Digital Input Capacitance
POWER REQUIREMENTS
V
DD
Quiescent Power Supply Current
t
ON (EN)
t
OFF ((EN)
t
TRANS
t
RISE
t
FALL
P
–1 dB
IP
3
0.4
0.6
1.1
70
65
37
70
65
35
27
26
30
22
23
22
8.5
13
12
3
7.5
16
31
3
10
16
15
5
9
28
V
INH
V
INH
V
INL
V
INL
I
I
C
RF
ON
C
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
V
DD
= 2.25 V to 2.75 V
V
DD
= 1.65 V to 1.95 V
0 ≤ V
IN
≤ 2.75 V
f = 1 MHz
f = 1 MHz
1.7
0.65 V
CC
0.7
0.35 V
CC
±1
± 0.1
3
2
1.65
I
DD
Digital inputs = 0 V or V
DD
0.1
1
2
Temperature range B Version: −40°C to +85°C.
Typical values are at V
DD
= 2.5 V and 25°C, unless otherwise stated.
3
Operating frequency is the point at which insertion loss degrades by 1.5 dB.
4
Guaranteed by design, not subject to production test.
5
Video feedthrough is the dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test
setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.
Rev. 0 | Page 3 of 16
ADG904/ADG904-R
ABSOLUTE MAXIMUM RATINGS
Table 2. T
A
= 25°C, unless otherwise noted
Parameter
V
DD
to GND
Inputs to GND
Continuous Current
Input Power
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
TSSOP Package
θ
JA
Thermal Impedance
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD
Rating
–0.5 V to +4 V
–0.5 V to V
DD
+ 0.3 V
1
30 mA
18 dBm
–40°C to +85°C
–65°C to +150°C
150°C
143°C/W
300°C
235°C
1 kV
Table 3. Truth Table
A1
X
0
0
1
1
A0
X
0
1
0
1
EN
1
0
0
0
0
ON Switch
2
None
RF1
RF2
RF3
RF4
1
2
RFx Off Port Inputs to Ground = –0.5 V to V
DD
– 0.5 V.
OFF Switches have:
50 Ω termination to GND (ADG904).
Shunt to GND (ADG904-R).
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability. Only one absolute maximum rating may
be applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 4 of 16
ADG904/ADG904-R
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
EN
1
V
DD 2
GND
3
RF1
4
GND
5
GND
6
RF3
7
GND
8
GND
9
RFC
10
20
19
A0
A1
GND
RF2
ADG904
ADG904-R
18
17
16
GND
TOP VIEW
(Not to Scale)
15
GND
14
13
12
11
RF4
GND
04504-0-002
GND
GND
Figure 5. 20-Lead TSSOP (RU-20)
Table 4. Pin Function Descriptions
Pin No.
1
2
3, 5, 6, 8, 9, 11, 12, 13,
15, 16, 18
4
7
10
14
17
19
20
Mnemonic
EN
V
DD
GND
RF1
RF3
RFC
RF4
RF2
A1
A0
Function
Active Low Digital Input. When high, the device is disabled and all switches are off. When low, Ax
logic inputs determine on switches.
Power Supply Input. These parts can be operated from 1.65 V to 2.75 V. V
DD
should be decoupled
to GND.
Ground Reference Point for All Circuitry on the Part.
Who has the DS18B20 temperature measurement upper computer program and lower computer program, with trend graphic display function, please send me a copy. I have a problem with a design and want to re...
[color=black][size=14pt][font=宋体] Switching power supplies have become increasingly popular due to their small size, light weight, and high efficiency. MOSFET has become one of the most commonly used ...
Zhang Jie and Xie Na held their wedding in Shangri-La today. We would like to wish the two newlyweds happiness!
This wedding was quite high-profile, and many people said it was hype. But the word hype...
The welding and debugging of EE-FPGA-V1.0 is finally completed today. I quickly come here to share my experience.
welding
1. According to the BOM provided by moderator chenzhufly , the purchased origi...
I want to collect pulse signals, use port interrupt counting, and timer interrupt reading, but I don't know how to add code to the protocol stack. Please give me some advice....
This program is written to simulate the serial port hardware mechanism. When used, a timed interrupt can be set with a time interval of 1/4 baud rate. The receiving function is called once for ea...[Details]
introduction
1 The significance of using RTOS on MSP430
It is understandable that it is meaningless to use RTOS on MSP430. Because the hardware resources of MSP430 are limited (for exampl...[Details]
In public places such as schools, government agencies, factories and mines, as well as public corridors in residential areas, the phenomenon of long-burning lights is very common, which causes a h...[Details]
DSP (digital signal processor) is used more and more frequently in today's engineering applications. There are three main reasons for this: first, it has powerful computing power and is capable of ...[Details]
Editor's note: In order to help technicians or engineers who have knowledge of PIC microcontroller assembly language quickly master the method of using C language to program PIC microcontrollers, t...[Details]
Motors are important products that convert electrical energy into mechanical energy to achieve automation, and they are widely used in industrial control, medical electronics, white a...[Details]
Since the late 1990s, with the demand for higher system efficiency and lower power consumption, the technological update of telecommunications and data communication equipment has promoted the deve...[Details]
a. Keep the battery clean, wipe off the spilled electrolyte, contaminated dirt and dust in time; keep the poles and terminal clamps clean and in good contact, and apply vaseline or butter to preven...[Details]
The production process of lithium batteries does not mention the previous processes such as material preparation, winding, liquid injection, and packaging, but only talks about the final formation ...[Details]
Rated capacity refers to the maximum output power of the UPS (the product of voltage V and current A).
Usually, the UPS power supplies sold on the market are marked with "W" (watt) for smaller...[Details]
The principles to be followed are as follows:
(1) In terms of component layout, related components should be placed as close as possible. For example, clock generators, crystal oscillat...[Details]
The biggest advantage of Profibus is that it is guaranteed by the stable international standard EN50170 and has been proven to be universal in practical applications. It has been widely used in man...[Details]
Abstract: Based on the analysis of the characteristics of the IRIG-B (DC) code type, a design method for IRIG-B (DC) time code decoding is proposed. This method consists of a small number of periph...[Details]
Traditional synthesis techniques are increasingly unable to meet the needs of today's very large and complex FPGA designs implemented in 90nm and below process nodes. The problem is that traditio...[Details]
1. Brief Introduction
With the continuous development and improvement of single-chip microcomputer technology, single-chip microcomputers have been widely used in all walks of life, and ...[Details]
Download Centre
京公网安备 11010802033920号
EEWORLD
