Rev 4:Nov 2004
AOD414, AOD414L( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOD414L ( Green Product ) is
offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 85A
R
DS(ON)
< 5.2mΩ (V
GS
= 10V)
R
DS(ON)
< 7.0mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±20
85
73
200
30
140
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
14.2
40
0.56
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD414, AOD414L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=20A
T
J
=125°C
1.2
110
4.2
6
5.6
85
0.7
1
85
6060
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
638
355
0.45
96.4
V
GS
=4.5V, V
DS
=15V, I
D
=20A
46.4
13.6
15.6
15.7
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=100A/µs
I
F
=20A, dI/dt=100A/µs
14.2
55.5
14
31
24
21
21
75
21
38
29
0.6
115
55
7000
5.2
7.5
7
1.8
Min
30
0.005
1
5
100
2.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on steady-state R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
T
C
is limited
G. The maximum current rating
=100°C
by the package current capability.
T
A
=25°C
-55 to 175
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD414, AOD414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
I
D
(A)
30
20
10
0
0
2
3
4
V
DS
(Volts)
Figure 1: On-Region Characteristics
1
5
10V
4.5V
3.5V
V
GS
=3V
40
I
D
(A)
125°C
30
20
10
0
1
1.5
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
4
25°C
60
50
V
DS
=5V
7.0
6.5
6.0
R
DS(ON)
(m
Ω
)
5.5
5.0
4.5
4.0
3.5
3.0
0
20
40
60
80
100
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
V
GS
=10V
V
GS
=4.5V
1.8
Normalized On-Resistance
1.6
1.4
1.2
1
I
D
=20A
V
GS
=4.5V
V
GS
=10V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
1.0E+01
10
I
D
=20A
R
DS(ON)
(m
Ω
)
8
125°C
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
25°C
4
25°C
125°C
6
T
C
=100°C
T
A
=25°C
-55 to 175
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
0.4
1.2
1.0E-03
2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD414, AOD414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
20
40
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=20A
Capacitance (pF)
8000
7000
6000
5000
4000
3000
C
oss
2000
1000
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
C
iss
1000
R
DS(ON)
limited
100
I
D
(Amps)
10ms
0.1s
10
1s
10s
1
T
J(Max)
=150°C
T
A
=25°C
DC
1ms
100µs
Power (W)
100
80
60
40
20
0
0.001
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
100
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.01
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
T
C
=100°C
T
A
=25°C
P
D
0.01
Single Pulse
-55 to 175
T
on
T
0.001
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
AOD414, AOD414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
I
D
(A), Peak Avalanche Current
T
A
=25°C
80
60
40
20
0
0.00001
120
Power Dissipation (W)
100
80
60
40
20
0
0.0001
0.001
0.01
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
t
A
=
L
⋅
I
D
BV
−
V
DD
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
100
80
Current rating I
D
(A)
60
40
20
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
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