UVPROM, 64KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| package instruction | CERAMIC, DIP-28 |
| Reach Compliance Code | unknown |
| Maximum access time | 150 ns |
| JESD-30 code | R-GDIP-T28 |
| memory density | 524288 bit |
| Memory IC Type | UVPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX8 |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| 5962-8764801XX | 5962-8764801YX | 5962-8764802XX | 5962-8764804XX | 5962-8764803YX | 5962-8764803XX | 5962-8764802YX | PCF1210-02-69K8BT1 | 5962-8764804XA | |
|---|---|---|---|---|---|---|---|---|---|
| Description | UVPROM, 64KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 64KX8, 150ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 | UVPROM, 64KX8, 200ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 64KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28 | UVPROM, 64KX8, 250ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 | UVPROM, 64KX8, 250ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 64KX8, 200ns, CMOS, CQCC32, WINDOWED, CERAMIC, LCC-32 | Fixed Resistor, Metal Film, 0.2W, 69800ohm, 150V, 0.1% +/-Tol, 50ppm/Cel, 1209, | UVPROM, 64KX8, 120ns, CMOS, CDIP28, WINDOWED, CERAMIC, DIP-28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | compliant | unknown |
| Number of terminals | 28 | 32 | 28 | 28 | 32 | 28 | 32 | 2 | 28 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Package form | IN-LINE | CHIP CARRIER, WINDOW | IN-LINE | IN-LINE, WINDOW | CHIP CARRIER, WINDOW | IN-LINE | CHIP CARRIER, WINDOW | SMT | IN-LINE, WINDOW |
| surface mount | NO | YES | NO | NO | YES | NO | YES | YES | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | THIN FILM | CMOS |
| package instruction | CERAMIC, DIP-28 | WINDOWED, CERAMIC, LCC-32 | CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERDIP-28 | WINDOWED, CERAMIC, LCC-32 | CERAMIC, DIP-28 | WINDOWED, CERAMIC, LCC-32 | - | WINDOWED, CERAMIC, DIP-28 |
| Maximum access time | 150 ns | 150 ns | 200 ns | 120 ns | 250 ns | 250 ns | 200 ns | - | 120 ns |
| JESD-30 code | R-GDIP-T28 | R-CQCC-N32 | R-GDIP-T28 | R-GDIP-T28 | R-CQCC-N32 | R-GDIP-T28 | R-CQCC-N32 | - | R-GDIP-T28 |
| memory density | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | - | 524288 bit |
| Memory IC Type | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | - | UVPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | - | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | - | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | - | 64000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS |
| organize | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | - | 64KX8 |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | WQCCN | DIP | WDIP | WQCCN | DIP | WQCCN | - | WDIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - | 5 V |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | - | MILITARY |
| Terminal form | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | - | THROUGH-HOLE |
| Terminal location | DUAL | QUAD | DUAL | DUAL | QUAD | DUAL | QUAD | - | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 |
| JESD-609 code | - | e0 | - | e0 | e0 | - | e0 | e3 | e0 |
| length | - | 13.95 mm | - | 37.25 mm | 13.95 mm | - | 13.95 mm | - | 37.1475 mm |
| Maximum seat height | - | 2.92 mm | - | 5.72 mm | 2.92 mm | - | 2.92 mm | - | 5.588 mm |
| Terminal surface | - | TIN LEAD | - | TIN LEAD | TIN LEAD | - | TIN LEAD | Matte Tin (Sn) - with Nickel (Ni) barrier | TIN LEAD |
| Terminal pitch | - | 1.27 mm | - | 2.54 mm | 1.27 mm | - | 1.27 mm | - | 2.54 mm |
| width | - | 11.4 mm | - | 15.24 mm | 11.4 mm | - | 11.4 mm | - | 15.24 mm |
京公网安备 11010802033920号
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