PZT3906T1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−40
−40
−5.0
−200
Unit
Vdc
Vdc
Vdc
mAdc
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COLLECTOR
2, 4
1
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
Thermal Resistance Junction−to−Lead #4
Junction and Storage Temperature Range
Symbol
P
D
R
qJA
R
qJA
T
J
, T
stg
Max
1.5
12
83.3
35
−55
to
+150
Unit
W
mW/°C
°C/W
°C/W
°C
MARKING
DIAGRAM
AYW
2A
G
G
1
2A
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm
2
of copper area.
ORDERING INFORMATION
Device
PZT3906T1
PZT3906T1G
Package
SOT−223
SOT−223
(Pb−Free)
Shipping
†
1000 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 2
1
Publication Order Number:
PZT3906T1/D
PZT3906T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Note 2)
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
Collector Cutoff Current
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
=
−0.1
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−50
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−5.0
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
=
−0.5
Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc, f = 1.0 kHz)
Output Admittance
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc, f = 1.0 kHz)
Noise Figure
(I
C
=
−100
mAdc,
V
CE
=
−5.0
Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2. Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
(V
CC
=
−3.0
Vdc, V
BE
= 0.5 Vdc,
I
C
=
−10
mAdc, I
B1
=
−1.0
mAdc)
(V
CC
=
−3.0
Vdc, I
C
=
−10
mAdc,
I
B1
= I
B2
=
−1.0
mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
225
75
ns
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
250
−
−
2.0
0.1
100
3.0
−
−
4.5
10
12
10
400
60
4.0
kW
X 10
−
4
−
mmhos
dB
MHz
pF
H
FE
60
80
100
60
30
−
−
−0.65
−
−
−
300
−
−
−0.25
−0.4
−0.85
−0.95
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
−40
−40
−5.0
−
−
−
−
−
−50
−50
nAdc
Vdc
Symbol
Min
Max
Unit
V
CE(sat)
Vdc
V
BE(sat)
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2
PZT3906T1
3V
+9.1 V
275
< 1 ns
+0.5 V
10 k
0
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
t
1
10.9 V
1N916
C
S
< 4 pF*
10 k
< 1 ns
275
3V
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
PZT3906T1
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
1000
700
500
300
200
100
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
500
300
200
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
500
300
200
Figure 4. Charge Data
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn
−On
Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL− SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8
6
4
2
0
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
1.0
0
0.1
0.1
0.2
0.4
1.0 2.0
4.0
10
20
R
g
, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
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4
PZT3906T1
h PARAMETERS
(V
CE
=
−
10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
100
70
50
30
20
h fe , DC CURRENT GAIN
200
100
70
50
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10
−4
)
20
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
1.0
0.7
0.5
0.1
0.2
2.0 3.0
0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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