2729GN-150 Rev 1
2729GN – 150
150 Watts - 60 Volts, 100
μs,
10%
Radar 2700 - 2900 MHz
GENERAL DESCRIPTION
The 2729GN-150 is an internally matched, COMMON SOURCE, class AB
GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF
output power at 100µs pulse width, 10% duty factor across the 2700 to 2900
MHz band. The transistor has internal pre-match for optimal performance. This
hermetically sealed transistor is specifically designed for S-band radar
applications. It utilizes gold metallization and eutectic attach to provide highest
reliability and superior ruggedness.
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
330 W
Device Dissipation @ 25°C
Maximum Voltage and Current
150 V
Drain-Source Voltage (V
DSS
)
Gate-Source Voltage (V
GS
)
-8 to +0 V
Maximum Temperatures
Storage Temperature (T
STG
)
-55 to +125
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25°C
Symbol
Pout
Gp
ηd
R/L
VSWR-T
Өjc
•
Characteristics
Output Power
Power Gain
Drain Efficiency
Input Return Loss
Load Mismatch Tolerance
Thermal Resistance
Test Conditions
Pin=8W, Freq=2.7, 2.8, 2.9 GHz
Pin=8W, Freq=2.7, 2.8, 2.9 GHz
Pin=8W, Freq=2.7, 2.8, 2.9 GHz
Pin=8W, Freq=2.7, 2.8, 2.9 GHz
Pout=150W, Freq= 2.7 GHz
Pulse Width=100uS, Duty=10%
Min
150
12.7
50
-9
Typ
165
13.2
60
Max
Units
W
dB
%
dB
°C/W
5:1
1.1
Bias Condition: Vdd=+60V, Idq=250mA peak current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25°C
I
D(Off)
I
G(Off)
BV
DSS
Drain leakage current
Gate leakage current
Drain-source breakdown voltage
V
gS
= -8V, V
D
= 60V
V
gS
= -8V, V
D
= 0V
V
gs
=-8V, I
D
= 2mA
2.5
2
250
mA
mA
V
Issue July 2011
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729GN-150 Rev 1
2729GN – 150
150 Watts - 60 Volts, 100
μs,
10%
Radar 2700 - 2900 MHz
Typical Performance Data:
Frequency
2700 MHz
2800 MHz
2900 MHz
Pin (W)
8
8
8
Pout (W)
152
155
168
Id (A)
0.42
0.40
0.38
RL (dB) Nd (%)
-11
-12
-10
60
64
74
G (dB)
12.8
12.8
13.2
M odel 2729GN-150: Pin vs. Pout & Gain
180
160
140
120
Pout (W)
100
80
14
60
40
20
0
3.0
4.0
5.0
6.0
Pin (W )
7.0
2.7GHz
8.0
2.8GHz
9.0
2.9GHz
10
12
Gp (dB)
16
18
20
Model 2729GN-150: Pin vs. Efficiency
100%
Efficiency (%)
80%
60%
40%
20%
0%
3.0
4.0
5.0
6.0
Pin (W)
7.0
2.7GHz
8.0
2.8GHz
9.0
2.9GHz
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729GN-150 Rev 1
2729GN – 150
150 Watts - 60 Volts, 100
μs,
10%
Radar 2700 - 2900 MHz
Transistor Impedance Information
Impedance Data
Freq (GHz)
2.7
2.8
2.9
Zs
5.62 – j11.20
5.27 – j10.74
4.94 – j10.34
Zl
5.28 – j3.20
5.37 – j2.74
5.49 – j2.28
Note:
Z
in
is looking into the input circuit;
Z
Load
is looking into the output circuit.
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
2729GN-150 Rev 1
2729GN – 150
150 Watts - 60 Volts, 100
μs,
10%
Radar 2700 - 2900 MHz
Test Circuit Diagram
Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
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