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KSA1220A

Description
Audio Frequency Power Amplifier High Frequency Power Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size75KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

KSA1220A Overview

Audio Frequency Power Amplifier High Frequency Power Amplifier

KSA1220A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz
KSA1220/1220A
KSA1220/1220A
Audio Frequency Power Amplifier
High Frequency Power Amplifier
• Complement to KSC2690/KSC2690A
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
T
C
=25°C unless otherwise noted
Parameter
: KSA1220
: KSA1220A
: KSA1220
: KSA1220A
Ratings
- 120
- 160
- 120
- 160
-5
- 1.2
- 2.5
- 0.3
1.2
20
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 120V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 5V, I
C
= - 5mA
V
CE
= - 5V, I
C
= - 0.3A
I
C
= - 1A, I
B
= - 0.2A
I
C
= - 1A, I
B
= - 0.2A
V
CE
= - 5V, I
C
= - 0.2A
V
CB
= - 10, I
E
= 0
f = 1MHz
35
60
150
140
- 0.4
-1
175
26
Min.
Typ.
Max.
-1
-1
320
- 0.7
- 1.3
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

KSA1220A Related Products

KSA1220A KSA1220
Description Audio Frequency Power Amplifier High Frequency Power Amplifier Audio Frequency Power Amplifier High Frequency Power Amplifier
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1.2 A 1.2 A
Collector-emitter maximum voltage 160 V 120 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 60
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 20 W 20 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 175 MHz 175 MHz
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