KRC883T datasheet, PDF - EEWORLD Datasheet

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KRC883T: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING); CategoryDiscrete semiconductor The transistor; File Size384KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC883T Overview

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

KRC883T Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	350
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

AUDIO MUTING APPLICATION.

KRC881T~KRC886T

EPITAXIAL PLANAR NPN TRANSISTOR

E

FEATURES

High emitter-base voltage : V

EBO

=25V(Min)

High reverse h

FE

: reverse h

FE

=150(Typ.) (V

CE

=-2V, I

C

=-4mA)

With Built-in Bias Resistors.

Simplify Circuit Design.

Reduce a Quantity of Parts and Manufacturing Process.

C

A

F

G

K

1

B

K

6

Low on resistance : R

on

=1 (Typ.) (I

B

=5mA)

2

5

4

DIM

A

B

C

D

E

D

F

G

H

I

J

K

L

3

MILLIMETERS

_

2.9 + 0.2

1.6+0.2/-0.1

_

0.70 + 0.05

+ 0.1

0.4 _

2.8+0.2/-0.3

_

1.9 + 0.2

0.95

_

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

J

C

R1

6

5

4

B

Q1

Q2

1.

2.

3.

4.

5.

6.

Q

1

Q

1

Q

2

Q

2

Q

2

Q

1

EMITTER

BASE

COLLECTOR

EMITTER

BASE

COLLECTOR

E

1

2

3

MAXIMUM RATING (Ta=25

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

C

*

T

j

T

stg

0.8

)

RATING

50

20

25

300

0.9

150

-55 150

UNIT

V

mA

W

CHARACTERISTIC

* Package mounted on a ceramic board (600

MARK SPEC

TYPE

KRC881T

KRC882T

KRC883T

KRC884T

KRC885T

KRC886T

h

FE

classification

B

MQB

MRB

MSB

MTB

MUB

MVB

1

2

3

Marking

h

FE

Rank

Type Name

6

5

4

2002. 12. 5

Revision No : 2

I

EQUIVALENT CIRCUIT

EQUIVALENT CIRCUIT (TOP VIEW)

L

G

J

H

TS6

Lot No.

1/2

KRC883T Related Products

	KRC883T	KRC885T	KRC881T	KRC886T	KRC884T	KRC882T
Description	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	350	350	350	350	350	350
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
Maker	KEC	KEC	-	KEC	KEC	KEC

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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