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KRC882T

Description
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
CategoryDiscrete semiconductor    The transistor   
File Size384KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

KRC882T Overview

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

KRC882T Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)350
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse h
FE
: reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
C
A
F
G
K
1
B
K
6
Low on resistance : R
on
=1 (Typ.) (I
B
=5mA)
2
5
4
DIM
A
B
C
D
E
D
F
G
H
I
J
K
L
3
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
+ 0.1
0.4 _
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
J
C
R1
6
5
4
B
Q1
Q2
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
E
1
2
3
MAXIMUM RATING (Ta=25
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
0.8
)
RATING
50
20
25
300
0.9
150
-55 150
UNIT
V
V
V
mA
W
CHARACTERISTIC
* Package mounted on a ceramic board (600
MARK SPEC
TYPE
KRC881T
KRC882T
KRC883T
KRC884T
KRC885T
KRC886T
h
FE
classification
B
MQB
MRB
MSB
MTB
MUB
MVB
1
2
3
Marking
h
FE
Rank
Type Name
6
5
4
2002. 12. 5
Revision No : 2
I
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
L
G
J
H
TS6
Lot No.
1/2

KRC882T Related Products

KRC882T KRC885T KRC883T KRC881T KRC886T KRC884T
Description EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 350 350 350 350 350 350
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz
Maker KEC KEC KEC - KEC KEC

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