KRA738U datasheet, PDF - EEWORLD Datasheet

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KRA738U: DescriptionEPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size69KB，6 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRA738U Overview

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA738U Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.54
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	33
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

FEATURES

With Built-in Bias Resistors.

Simplify Circuit Design.

KRA736U~KRA742U

EPITAXIAL PLANAR PNP TRANSISTOR

Reduce a Quantity of Parts and Manufacturing Process.

DIM

MILLIMETERS

2.00 + 0.20

1.3 + 0.1

2.1 + 0.1

1.25 + 0.1

0.65

0.2+0.10/-0.05

0-0.1

0.9 + 0.1

0.15+0.1/-0.05

EQUIVALENT CIRCUIT

OUT

BIAS RESISTOR VALUES

TYPE NO.

KRA736U

R1(k )

2.2

4.7

100

R2(k )

2.2

4.7

100

KRA737U

KRA738U

KRA739U

COMMON(+)

COMMON (EMITTER)

IN (BASE)

OUT (COLLECTOR)

IN (BASE)

OUT (COLLECTOR)

KRA740U

KRA741U

KRA742U

US6

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRA736U 742U

KRA736U

KRA737U

KRA738U

CHARACTERISTIC

RATING

-50

-10, 5

-12, 10

-12, 5

UNIT

Input Voltage

KRA739U

KRA740U

KRA741U

KRA742U

-20, 7

-30, 10

-40, 15

-40, 10

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

* : Total Rating.

KRA736U

742U

stg

-100

200

150

-55 150

Marking

Type Name

MARK SPEC

TYPE

MARK

KRA736U KRA737U KRA738U KRA739U KRA740U KRA741U KRA742U

2002. 7. 9

Revision No : 2

1/6

KRA738U Related Products

	KRA738U	KRA736U	KRA742U	KRA741U	KRA740U	KRA739U	KRA737U
Description	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.54	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 2.13	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	33	33	62	33	24	30	20
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Maker	KEC	KEC	-	-	-	KEC	KEC

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