SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
A1
KRA730U~KRA734U
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
6
5
4
D
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
2
3
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A
H
C
C
EQUIVALENT CIRCUIT
C
B
R1
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
T
G
T
Q1
Q2
1.
2.
3.
4.
5.
6.
Q
1
Q
2
Q
2
Q
2
Q
1
Q
1
EMITTER
EMITTER
BASE
COLLECTOR
BASE
COLLECTOR
E
1
2
3
US6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
-50
-50
-5
-100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
* Total Rating.
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA730U
KRA731U
Input Resistor
KRA732U
KRA733U
KRA734U
Note : * Characteristic of transistor only.
R
1
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
*
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-10V, I
C
=-5mA
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
Type Name
5
4
UNIT
nA
nA
V
MHz
k
Marking
6
MARK SPEC
TYPE
MARK
KRA730U
JK
KRA731U
JM
KRA732U
JN
KRA733U
JO
KRA734U
JP
1
2
3
2002. 7. 9
Revision No : 2
1/4
KRA730U~KRA734U
h
FE
- I
C
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
-2
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.1
Ta=100 C
Ta=25 C
Ta=-25 C
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
KRA730U
KRA730U
I
C
/I
B
=20
V
CE(sat)
- I
C
Ta=100 C
Ta=25 C
Ta=-25 C
V
CE
=-5V
10
-0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
KRA731U
h
FE
- I
C
-2
-1
-0.5
-0.3
-0.1
-0.05
-0.03
KRA731U
I
C
/I
B
=20
V
CE(sat)
- I
C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
V
CE
=-5V
10
-0.1
-0.3
-1
-3
-10
-30
-100
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER SATURATIN
VOLTAGE V
CE(sat)
(V)
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
KRA732U
h
FE
- I
C
-2
-1
-0.5
-0.3
-0.1
-0.05
-0.03
KRA732U
I
C
/I
B
=20
V
CE(sat)
- I
C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
V
CE
=-5V
10
-0.1
-0.3
-1
-3
-10
-30
-100
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
2002. 7. 9
Revision No : 2
3/4
Microcontroller MCU
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