35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Number of terminals | 4 |
| Number of components | 4 |
| Maximum average input current | 35 A |
| Processing package description | Plastic, KBPC, 4 PIN |
| state | CONSULT MFR |
| packaging shape | SQUARE |
| Package Size | Flange mounting |
| Terminal form | Welding LUG |
| terminal coating | NOT SPECIFIED |
| Terminal location | UPPER |
| Packaging Materials | Plastic/Epoxy |
| structure | Bridge, 4 ELEMENTS |
| Shell connection | isolation |
| Diode component materials | silicon |
| Diode type | bridge rectifier diode |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum non-repetitive peak forward current | 400 A |
| KBPC3510 | KBPC3508 | KBPC3506 | KBPC3504 | KBPC3502 | KBPC3501 | KBPC35005 | |
|---|---|---|---|---|---|---|---|
| Description | 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | 5 A, SILICON, BRIDGE RECTIFIER DIODE | 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |