K4H560438E-ZCB3 datasheet, PDF

K4H560438E-ZCB3: Description256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant); Categorystorage storage; File Size361KB，23 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H560438E-ZCB3 Overview

256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Humidity sensitivity level	3
Number of terminals	60
word count	67108864 words
character code	64000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.003 A
Maximum slew rate	0.26 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free

DDR SDRAM

256Mb E-die DDR SDRAM Specification

60 FBGA with Pb-Free

(RoHS compliant)

Revision 1.1

October, 2004

Rev. 1.1 October, 2004

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