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K4H1G1638M-TCA2

Description
128Mb DDR SDRAM
Categorystorage    storage   
File Size464KB,53 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4H1G1638M-TCA2 Overview

128Mb DDR SDRAM

K4H1G1638M-TCA2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSSOP, TSSOP66,.46
Reach Compliance Codecompli
Maximum access time0.75 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
memory density1073741824 bi
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level1
Number of terminals66
word count67108864 words
character code64000000
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)225
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length2,4,8
Maximum standby current0.006 A
Maximum slew rate0.4 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
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