OM
PL
IA
N
Features
n
RoHS compliant* and halogen free**
n
Surface Mount SMB package
n
Breakdown Voltage: 6.8 to 550 volts
n
Peak Pulse Power: 600 watts
n
Typical temperature coefficient:
∆V
BR
= 0.1 % x V
BR
@ 25 °C x ∆T
Applications
n
IEC 61000-4-2 ESD (Min. Level 4)
n
IEC 61000-4-4 EFT
n
IEC 61000-4-5 Surge
*R
oH
S
C
T
LE
AD
F
RE
E
P6SMB Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)
size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response
times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum
Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Maximum Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Maximum Instantaneous Forward Voltage @ I
PP
= 50 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
P6SMB6.8A ~ P6SMB200A
P6SMB220A ~ P6SMB550A
Symbol
P
PK
I
FSM
V
F
T
STG
T
J
Value
600
100
3.5
5.0
-55 to +150
-55 to +150
Unit
Watts
Amps
Volts
°C
°C
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
How to Order
P6SMB 6.8 CA
Series
P6SMB= SMB/DO-214AA
Breakdown Voltage
6.8 to 550 = 6.8 to 550 VBD (Volts)
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390
Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
* RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br)
and Chlorine (Cl) content is 1500 ppm or less.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
P6SMB Transient Voltage Suppressor Diode Series
3312 - 2 mm SMD Trimming Potentiometer
Rating & Characteristic Curves
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Peak Forward Surge Current (Amps)
Pulse
100 100
Curve
Derating
100 100
Peak Pulse Derating in Percent of
Peak Pulse Derating in Percent of
Peak Pulse Derating in Percent of
Peak Power or Current
Peak Power or Current
Peak Pulse Derating in Percent of
Peak Power or Current
Peak Power or Current
Peak Pulse Derating in Percent of
Peak Pulse Derating in Percent of
Peak Power or Current
Peak Power or Current
100100
75
75
75 75
75
75
Maximum Non-Repetitive Surge Current
120 120
120 120
120
100 100
100120 100
100100 80
80
80
80
80 80 60
60
60
60
60
40
40
40 60 40
Pulse Width 8.3 ms
Pulse Width 8.3 ms
Pulse Width 8.3 ms
40 40 20 Pulse Width 8.3 ms
20
20
20 Single Half Sine-Wave
Single Half Sine-Wave
Single Half Sine-Wave
Single Half Sine-Wave
Pulse Width 8.3 ms
Pulse Width 8.3 ms
20 20 0 Single Half Sine-Wave
Single Half Sine-Wave
0
0
0
1
1
2 5
5
5 10
10
20
20 50
50 100 100
1
2
20
12
2
5 10
10
20 50
50 100 100
0 0
Number of Cycles at 60 Hz
Number of Cycles at 60 Hz
Number of Cycles at 60 Hz50
5
1 1 2 2
5 Number of Cycles at 60 Hz
10 10 20 20
50
100100
Number of Cycles at 60 Hz
Number of Cycles at 60 Hz
50
50
25
25
50
50
25
25
50 50
25 25
0
0
0
0
0
0
25
50
75
50
100 100
75
125 150 150
125 175 175
150 150 200 200
175 175
200 200
0
25
50
75
125 125
0 25
25
50 100 100
75
0 0
Ambient Temperature (°C)
Ambient Temperature (°C)
50 75Ambient Temperature ( 150
75 100100 125125
0 0 25 25 50Ambient Temperature (°C) 150°C) 175175 200200
Ambient Temperature (
Ambient Temperature (°C) °C)
Pulse Waveform
TR=10 µs
TR=10 µs
TR=10 µs
TR=10 µs
Peak value (IRSM)
Peak value (IRSM)
Peak value (IRSM)
100 100 Peak value (IRSM)
TR=10 µs
100 100 TR=10 µs
IRSM IRSM
Peak value (IRSM) IRSM
Half value=IRSM
Half value=
Peak value (IRSM)
Half value=
Half value= 2
2
100100
2
2
IRSM
IRSM
Half value=
Half value=
Pulse width (TP)
Pulse width (TP)
2 2 Pulse width (TP)
Pulse width (TP)
is defined as that point
is defined as that point
is defined as that point
is defined as that point
where the peak current
where the peak current
where the peak current
Pulse width (TP)
where the peak current
Pulse width (TP)
decays to 50 % of IPSM.
decays to 50 % of IPSM.
decays to 50 % of IPSM.
is defined as that point
decays to 50 % of IPSM.
50
50
is defined as that point
50
50
where the peak current
where the peak current
10 x 1000 waveform
10 x 1000 waveform
10 x 1000 waveform
decays to 50 % of IPSM.
10 x 1000 waveform
decays to 50 % of IPSM.
50 50 TA=25 °C
TA=25 °C
TA=25 °C
as defined by R.E.A.
as defined by R.E.A.
TA=25 °C
as defined by R.E.A.
as defined by R.E.A.
TP
TP
10 x 1000 waveform
TP
TP
10 x 1000 waveform
TA=25 °C
as defined by R.E.A.
TA=25 °C
as defined by R.E.A.
TP TP
IIP, Peak Pulse Current (%)
P, Peak Pulse Current (%)
0
0
0
0
0
0
0
0
0 0
0 0
1.0
1.0
1.0 1.0
1.0 2.0
1.0 2.0
2.0
2.0
3.0
3.0
3.0
3.0
4.0
4.0
4.0 4.0
4.0
4.0
Typical Junction Capacitance
10000 10000
10000 10000
10000
10000
CJ - Junction Capacitance (pF)
CJ - Junction Capacitance (pF)
CJ - Junction Capacitance (pF)
CJ - Junction Capacitance (pF)
Bidirectional V = 0 V
Bidirectional V = 0 V
Bidirectional V = 0 V
Bidirectional V = 0 V
Bidirectional V = 0 V
Bidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional V = 0 V
Unidirectional @VR
Unidirectional @VR
Unidirectional @VR
Unidirectional @VR
IIP, Peak Pulse Current (%)
IP, Peak Pulse Current (%)
P, Peak Pulse Current (%)
IP, Peak Pulse Current (%)
1000 1000
1000 1000
1000
1000
100
100
100
100
Unidirectional @VR
Unidirectional @VR
100100
10
10
10
10
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
T = 25 °C
TVsig = 50 mVp-p
= 25 °CVsig = 50 mVp-p
Vsig = 50 mVp-p
Vsig = 50 mVp-p
1
1
f = 1.0 MHz
f = 1.0 MHz
Vsig = 50 mVp-p
10
Vsig = 50 mVp-p
1
10
Bidirectional @VR
Bidirectional @VR
Bidirectional @VR
Bidirectional @VR
CJ - Junction Capacitance (pF)
CJ - Junction Capacitance (pF)
= 25 °T = 25 °C
T
10 10
TT = 25 ° CC = 25 ° C
T, Time (ms)
T, Time (ms)
T, Time (ms)
T, Time (ms)3.0
2.0 2.0
3.0
T, Time (ms)
T, Time (ms)
1
1
1
1
1 1
1
10
10
Bidirectional @VR
Bidirectional @VR
100
100
100
100
1000 1000
1000 1000
1 1
V BR - Reverse Breakdown Voltage (V)
V
10 10
BR - Reverse Breakdown Voltage (V)
1000
100100
V BR - Reverse Breakdown Voltage (V)
V BR - Reverse Breakdown Voltage (V)
1000
V V - Reverse Breakdown Voltage (V)
BR - Reverse Breakdown Voltage (V)
Pulse Rating Curve
100
100
100100
100
100
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Non-repetitive
Non-repetitive
Non-repetitive
Non-repetitive
Pulse Waveform
Pulse Waveform
Pulse Waveform
Pulse Waveform
Non-repetitive
Non-repetitive
Shown in Pulse Waveform Graph
Shown in Pulse Waveform Graph
Shown in Pulse Waveform Graph
Shown in Pulse Waveform Graph
Pulse Waveform
Pulse Waveform
Shown in Pulse Waveform Graph
Shown in Pulse Waveform Graph
RM(AV) Steady State Power Dissipation (W)
RM(AV) Steady State Power Dissipation (W)
RM(AV) Steady State Power Dissipation (W)
RM(AV) Steady State Power Dissipation (W)
BR
Steady State Power Derating Curve
5.0
5.0
RM(AV) Steady State Power Dissipation (W)
RM(AV) Steady State Power Dissipation (W)
5.0
5.0
5.0 5.0
4.0 4.0
4.0
4.0
4.0 4.0
3.0 3.0
3.0
3.0
3.0 3.0
2.0 2.0
2.0
2.0
2.0 2.0
1.0 1.0
1.0
1.0
1.0 1.0
60 Hz Resistive or
60 Hz Resistive or
60 Hz Resistive or
60 Hz Resistive or
Inductive Load
Inductive Load
Inductive Load
Inductive Load
60 Hz Resistive or
60 Hz Resistive or
Inductive Load 100
25
50
75
75
100 100
125
50
75
100
125
50
2550 Inductive Load
75
PP, Peak Power (KW)
PP, Peak Power (KW)
PP, Peak Power (KW)
PP, Peak Power (KW)
10 10
PP, Peak Power (KW)
PP, Peak Power (KW)
10
10
10
10
1.0
1.0
1.0
1.0
1.0 1.0
0.0 0.0
0.0
0.1
0.1 0.1
0.0
0.1
0
0 25
125
150 150
175 175
200 200
1.0 µs 1.0 µs
0.1 µs 0.1 µs
0
150 150
175 175
200 200
100 µs 100 µs
1.0 ms 1.0 ms
0.1 µs 0.1 µs
1.0 µs 1.0 µs10 µs 10 µs100 µs100 µs1.0 ms1.0 ms10 ms 10 ms
10 µs 10 µs
10 ms 10 ms
0 25
125
0.0 0.0
0.1 0.1
TL, Lead Temperature (°C)
TL, Lead Temperature (°C)
TP, Pulse Width
TL, Lead Temperature (°C)
TP, Pulse Width
75 100100 125125 150
0.1 µs 1.0 µs
1.0 µs 10 µsTP, Pulse Width
10 µs TP, Pulse Width 1.0 ms 10 ms
10 ms
100 µs 1.0 ms
0 0
25 25 50 50 75 TL, Lead Temperature (°C) 150 175175 200200
100 µs
0.1 µs
Specifications are subject to change without notice.
TL, Lead Temperature (°C)
TP, Pulse Width
TL, Lead Temperature (°C)
TP, Pulse Width
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Microchip MCU
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