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JANTX1N6134

Description
ESD Suppressors / TVS Diodes Bi-Directional TVS
CategoryDiscrete semiconductor    diode   
File Size444KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTX1N6134 Overview

ESD Suppressors / TVS Diodes Bi-Directional TVS

JANTX1N6134 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionO-XALF-W2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Minimum breakdown voltage135.375 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation3 W
Certification statusQualified
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
1N6103A – 1N6137A
Voidless Hermetically Sealed Bidirectional
Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
Available on
commercial
versions
DESCRIPTION
This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage
Suppressors (TVS) is military qualified to MIL-PRF-19500/516 and is ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage
selection from 5.7 to 152 volts with a 500 watt rating for a 10/1000
µs
pulse. They are very robust
in hard-glass construction and use internal “Category
1”
metallurgical bonds. These devices are
available as both a non-suffix part and an “A” version providing different voltage tolerances as
described in the nomenclature section. These devices are also available in a surface mount MELF
package configuration.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualified versions are available per MIL-PRF-19500/516.
*JANS available for 1N6103(A) thru 1N6118(A) per MIL-PRF-19500/516 as well as further options
for screening in reference to MIL-PRF-19500 for all others in this series.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
Package
(surface mount)
1N6103US – 1N6137US
APPLICATIONS / BENEFITS
Military and other high-reliability applications.
Extremely robust construction.
Extensive range in working peak “standoff” voltage (V
WM
) from 5.7 to 152 volts.
500 watt peak pulse power (P
PP
) for a 10/1000
µs
pulse.
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively.
Protection from the secondary effects of lightning per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@
T
A
= 25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Peak Pulse Power @ 25 ºC (10/1000
µs)
o (1)
Steady-State Power @ T
L
= 75 C
o (2)
Steady-State Power @ T
A
= 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes:
1.
2.
o
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
D
P
D
df
T
SP
Value
-55 to +175
33.5
500
3.0
2.0
0.01
260
Unit
o
C
C/W
W
W
W
%
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
At 3/8 inch lead length from body.
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where maximum rated T
J
is not exceeded (also see
figure 4).
T4-LDS-0277, Rev. 1 (121354)
©2013 Microsemi Corporation
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