PD - 93969
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA9260
100K Rads (Si)
IRHNA93260 300K Rads (Si)
R
DS(on)
0.154Ω
0.154Ω
I
D
-29A
-29A
IRHNA9260
JANSR2N7426U
200V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard
™
HEXFET
TECHNOLOGY
®
QPL Part Number
JANSR2N7426U
JANSF2N7426U
SMD-2
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
-29
-18
-116
300
2.4
±20
500
-29
30
-20
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
➁
V
mJ
A
mJ
V/ns
o
C
g
300 (for 5s)
3.3 (Typical)
For footnotes refer to the last page
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1
11/21/00
IRHNA9260, JANSR2N7426U
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
—
-2.0
14
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.154
0.159
-4.0
—
-25
-250
-100
100
300
65
58
37
141
148
220
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -18A
➃
VGS = -12V, ID = -29A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -18A
➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -29A
VDS = -100V
VDD = -100V, ID = -29A
RG = 2.35Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6143
915
159
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-29
-116
-3.0
738
12
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -29A, VGS = 0V
➃
Tj = 25°C, IF = -29A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.42
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA9260, JANSR2N7426U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (SMD-2)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
= -160V, V
GS
=0V
V
GS
= -12V, I
D
=-18A
V
GS
= -12V, I
D
= -18A
V
GS
= 0V, IS = -29A
Min
-200
-2.0
—
—
—
—
—
—
Max
Min
Max
—
-5.0
-100
100
-25
0.161
0.160
-3.0
—
-200
-4.0
-2.0
-100
—
100
—
- 25
—
0.155
—
0.154
-3.0
—
—
1. Part number IRHNA9260
2. Part number IRHNA93260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
Range
(µm)
43.0
39.0
V
DS
(V)
@V
GS
=0V @V
GS
=5V @V
GS
=10V
-200
-200
-200
-200
-200
-125
@V
GS
=15V
-200
-75
@V
GS
=20V
—
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA9260, JANSR2N7426U
Pre-Irradiation
1000
100
-5.0V
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
-5.0V
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
10
1
20µs PULSE WIDTH
T = 25 C
J
°
10
100
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -29A
-I
D
, Drain-to-Source Current (A)
2.0
1.5
100
1.0
0.5
10
5.0
V DS = -50V
20µs PULSE WIDTH
8.0
9.0
6.0
7.0
10.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA9260, JANSR2N7426U
10000
8000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -29A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
C
oss
C
rss
4
0
1
10
100
0
0
50
100
150
FOR TEST CIRCUIT
SEE FIGURE 13
200
250
300
350
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
-I D, Drain-to-Source Current (A)
100
10
T
J
= 25
°
C
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
1ms
1
1
0ms
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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