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IRHNA93260

Description
29 A, 200 V, 0.159 ohm, P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size116KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHNA93260 Overview

29 A, 200 V, 0.159 ohm, P-CHANNEL, Si, POWER, MOSFET

IRHNA93260 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)29 A
Maximum drain-source on-resistance0.159 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)116 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93969
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA9260
100K Rads (Si)
IRHNA93260 300K Rads (Si)
R
DS(on)
0.154Ω
0.154Ω
I
D
-29A
-29A
IRHNA9260
JANSR2N7426U
200V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard
HEXFET
TECHNOLOGY
®
QPL Part Number
JANSR2N7426U
JANSF2N7426U
SMD-2
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
-29
-18
-116
300
2.4
±20
500
-29
30
-20
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 (for 5s)
3.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
11/21/00

IRHNA93260 Related Products

IRHNA93260 JANSR2N7426U MIL-PRF-19500/655 JANSF2N7426U
Description 29 A, 200 V, 0.159 ohm, P-CHANNEL, Si, POWER, MOSFET 29 A, 200 V, 0.159 ohm, P-CHANNEL, Si, POWER, MOSFET 29 A, 200 V, 0.159 ohm, P-CHANNEL, Si, POWER, MOSFET 29A, 200V, 0.159ohm, P-CHANNEL, Si, POWER, MOSFET
Number of components 1 1 1 1
Number of terminals 3 3 3 3
surface mount YES YES Yes YES
Terminal form NO LEAD NO LEAD NO NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING switch SWITCHING
Transistor component materials SILICON SILICON silicon SILICON
Is it lead-free? Contains lead Contains lead - Contains lead
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 - CHIP CARRIER, R-CBCC-N3
Contacts 3 3 - 3
Reach Compliance Code unknow unknown - compli
ECCN code EAR99 EAR99 - EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ - 500 mJ
Shell connection DRAIN DRAIN - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V - 200 V
Maximum drain current (ID) 29 A 29 A - 29 A
Maximum drain-source on-resistance 0.159 Ω 0.159 Ω - 0.159 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 - R-CBCC-N3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER - CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL - P-CHANNEL
Maximum pulsed drain current (IDM) 116 A 116 A - 116 A
Certification status Not Qualified Not Qualified - Not Qualified
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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