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CGH40090PP

Description
RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt
Categorysemiconductor    Discrete semiconductor   
File Size1MB,13 Pages
ManufacturerCree
Websitehttp://www.cree.com/
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CGH40090PP Overview

RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt

CGH40090PP Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCree
Product CategoryRF JFET Transistors
RoHSDetails
Transistor TypeHEMT
TechnologyGaN
Gain12.5 dB
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage120 V
Vgs - Gate-Source Breakdown Voltage- 10 V to + 2 V
Id - Continuous Drain Current12 A
Output Power100 W
Maximum Drain Gate Voltage-
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation-
Mounting StyleScrew
Package / Case440199
PackagingTube
Application-
ConfigurationDual
Height4.34 mm
Length29 mm
Operating Frequency500 MHz to 2.5 GHz
Operating Temperature Range-
ProductGaN HEMT
Width5.97 mm
Forward Transconductance - Min-
Gate-Source Cutoff Voltage-
Number of Channels2 Channel
Class-
Development KitCGH40090PP-TB
Fall Time-
NF - Noise Figure-
P1dB - Compression Point-
Rds On - Drain-Source Resistance-
Rise Time-
Factory Pack Quantity96
Typical Turn-Off Delay Time-
Vgs th - Gate-Source Threshold Voltage- 3 V
CGH40090PP
90 W, RF Power GaN HEMT
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40090PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
Package Type
s: 440199
PN: CGH4009
0PP
Typical Performance Over 500 MHz - 2.5 GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Small Signal Gain
Gain at P
SAT
Saturated Power
Drain Efficiency at P
SAT
Input Return Loss
500 MHz
17.6
13.7
66.8
48.5
7.3
1.0 GHz
15.6
11.7
102.7
57.0
23.0
1.5 GHz
14.1
9.2
91.4
56.6
14.9
2.0 GHz
12.4
7.0
101.7
59.2
14.3
2.5 GHz
12.4
10.4
57.0
37.3
11.3
Units
dB
dB
W
%
dB
Features
015
Up to 2.5 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
100 W Typical P
SAT
55 % Efficiency at P
SAT
28 V Operation
Rev 5.0 – May 2
Subject to change without notice.
www.cree.com/rf
1

CGH40090PP Related Products

CGH40090PP CGH40090PP-TB
Description RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt RF Development Tools Test Board without GaN HEMT
Product Attribute Attribute Value Attribute Value
Manufacturer Cree Cree
Product Category RF JFET Transistors RF Development Tools
RoHS Details N
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Packaging Tube Bulk
Product GaN HEMT Demonstration Boards
Factory Pack Quantity 96 2
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