CGH40090PP
90 W, RF Power GaN HEMT
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40090PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
Package Type
s: 440199
PN: CGH4009
0PP
Typical Performance Over 500 MHz - 2.5 GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Small Signal Gain
Gain at P
SAT
Saturated Power
Drain Efficiency at P
SAT
Input Return Loss
500 MHz
17.6
13.7
66.8
48.5
7.3
1.0 GHz
15.6
11.7
102.7
57.0
23.0
1.5 GHz
14.1
9.2
91.4
56.6
14.9
2.0 GHz
12.4
7.0
101.7
59.2
14.3
2.5 GHz
12.4
10.4
57.0
37.3
11.3
Units
dB
dB
W
%
dB
Features
•
•
•
•
•
015
Up to 2.5 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
100 W Typical P
SAT
55 % Efficiency at P
SAT
28 V Operation
Rev 5.0 – May 2
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current
1
Soldering Temperature
2
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3,4
Symbol
V
DSS
V
GS
T
STG
T
J
I
GMAX
I
DMAX
T
S
Rating
84
-10, +2
-65, +150
225
28
12
245
80
1.45
-40, +150
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
85˚C
25˚C
25˚C
Conditions
25˚C
25˚C
τ
R
θJC
T
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
www.cree.com/RF/Document-Library
3
Measured for the CGH40090PP at P
DISS
= 112W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
2
Drain-Source Breakdown Voltage
V
GS(th)
V
GS(Q)
I
DS
V
BR
-3.8
–
23.2
120
-3.0
-2.7
28.0
–
-2.3
–
–
–
V
DC
V
DC
A
V
DC
V
DS
= 10 V, I
D
= 28.8 mA
V
DS
= 28 V, I
D
= 1.0 A
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 28.8 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics
3,4
(T
C
= 25
˚
C, F
0
= 2.0 GHz unless otherwise noted)
Small Signal Gain
Power Output at Saturation
5
Drain Efficiency
6
Output Mismatch Stress
Dynamic Characteristics
7
Input Capacitance
Output Capacitance
Feedback Capacitance
C
GS
C
DS
C
GD
–
–
–
19.0
5.9
0.8
–
–
–
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
G
SS
P
SAT
η
12
80
45
–
12.5
100
55
–
–
–
–
10 : 1
dB
W
%
Y
V
DD
= 28 V, I
DQ
= 1.0 A
V
DD
= 28 V, I
DQ
= 1.0 A
V
DD
= 28 V, I
DQ
= 1.0 A, P
OUT
= P
SAT
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 1.0 A,
P
OUT
= 90 W CW
VSWR
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40090PP-AMP
4
I
DQ
of 1.0 A is by biasing each device at 0.5 A.
5
P
SAT
is defined as: Q1 or Q2 = I
G
= 14 mA.
6
Drain Efficiency = P
OUT
/ P
DC
7
Capacitance values are for each side of the device.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40090PP Rev 5.0
Typical Performance
Gain and Efficiency vs Output Power measured in
Broadband Amplifier Circuit CGH40090PP-AMP
V
DD
= 28 V, I
and Drain Efficiency
- 2.5 GHz
CGH40090PP Gain
DQ
= 1.0 A, Freq = 0.5
vs Output Power
60
0.5 GHz Gain
0.5 GHz DE
1.0 GHz Gain
1.0 GHz DE
1.5 GHz Gain
1.5 GHz DE
2.0 GHz Gain
2.0 GHz DE
2.5 GHz Gain
2.5 GHz DE
60
50
50
30
30
20
20
10
10
0
20
25
30
35
40
45
50
0
Output Power (dBm)
Output Power and Drain Efficiency vs Frequency
measured in Broadband Amplifier Circuit CGH40090PP-AMP
V
DD
=
and Drain Efficiency versus Frequency
CGH40090PP -Output Power
28 V, I
DQ
= 1.0 A
60
55
50
45
40
35
30
25
20
15
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Output Power (dBm)
Drain Efficiency (%)
100
90
80
70
60
50
40
30
20
10
0
Output Power (dBm)
Frequency (GHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40090PP Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Drain Efficiency (%)
Drain Efficiency (%)
40
40
Gain (dB)
Typical Performance
Gain and Input Return Loss vs Frequency from 0.5 GHz to 2.5 GHz
in Broadband Amplifier Circuit CGH40090PP-AMP
Wide Band Amplifier: Gain and Input Return Loss
V
DD
= 28 V, I
DQ
= 1.0 A
20
18
16
14
12
10
8
6
4
2
0
0.5
1.0
1.5
2.0
2.5
S21
S11
0
-4
-8
Gain (dB)
-16
-20
-24
-28
-32
-36
-40
Frequency (GHz)
Maximum Available Gain and K Factor of the CGH40090PP
Vdd = 28 V, Idq = 1.0 A
MAG (dB)
Input Return Loss (dB)
-12
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40090PP Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
K Factor
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40090PP
V
DD
= 28 V, I
DQ
= 500 mA (per side)
Minimum Noise Figure (dB)
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH40090PP Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Noise Resistance (Ohms)
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