IS62WV51216ALL
IS62WV51216BLL
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
DECEMBER 2007
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
DD
(62WV51216ALL)
– 2.5V--3.6V V
DD
(62WV51216BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The
ISSI
IS62WV51216ALL/ IS62WV51216BLL are high-
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A data
byte allows Upper Byte
(UB)
and Lower Byte (LB) access.
The IS62WV51216ALL and IS62WV51216BLL are packaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
1
IS62WV51216ALL,
IS62WV51216BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
DD
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
DD
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
DD
+ 0.2
V
DD
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
Industrial Control Electronics
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