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BF-999-E6327

Description
RF MOSFET Transistors Silicon N-Channel MOSFET Triode
Categorysemiconductor    Discrete semiconductor   
File Size58KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BF-999-E6327 Overview

RF MOSFET Transistors Silicon N-Channel MOSFET Triode

BF-999-E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
Vds - Drain-Source Breakdown Voltage20 V
TechnologySi
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-23
PackagingCut Tape
PackagingMouseReel
PackagingReel
ConfigurationSingle
Height1 mm
Length2.9 mm
TypeRF Small Signal MOSFET
Width1.3 mm
Pd - Power Dissipation200 mW
QualificationAEC-Q100
Factory Pack Quantity3000
Vgs - Gate-Source Voltage+/- 6.5 V
Unit Weight0.000282 oz
BF999
Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz
preferably in FM applications
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BF999
Maximum Ratings
Parameter
Marking
LBs
1=G
2=D
Pin Configuration
3=S
-
-
-
Package
SOT23
Symbol
V
DS
I
D
±
I
GSM
P
tot
T
stg
T
ch
Value
20
30
10
200
-55 ... 150
150
Unit
V
mA
mA
mW
°C
Drain-source voltage
Continuous drain current
Gate-source peak current
Total power dissipation
T
S
76 °C
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
2)
1
Pb-containing
2
For
Symbol
R
thchs
Value
370
Unit
K/W
package may be available upon special request
calculation of
R
thJA please refer to Application Note Thermal Resistance
1
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