BC847BPDXV6,
SBC847BPDXV6
NPN/PNP Dual General
Purpose Transistor
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
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(3)
(2)
(1)
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
−
NPN
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
6.0
100
Unit
V
V
V
mAdc
Q
1
Q
2
(4)
(5)
BC847BPDX6T1
54
12
3
(6)
6
MAXIMUM RATINGS
−
PNP
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−50
−5.0
−100
Unit
V
V
V
mAdc
SOT−563
CASE 463A
MARKING DIAGRAM
4F MG
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance
−
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance
−
Junction-to-Ambient (Note 1)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Max
500
4.0
250
−55
to
+150
Unit
mW
mW/°C
°C/W
4F = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC847BPDXV6T1G
Package
Shipping
†
R
qJA
SOT−563
4 mm pitch
(Pb−Free) 4000/Tape & Reel
SBC847BPDXV6T1G SOT−563
2 mm pitch
(Pb−Free) 4000/Tape & Reel
Unit
mW
mW/°C
°C/W
°C
BC847BPDXV6T5G
SOT−563
2 mm pitch
(Pb−Free) 8000/Tape & Reel
Symbol
P
D
R
qJA
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 2
1
Publication Order Number:
BC847BPDXV6T1/D
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (NPN)
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
Collector
−Emitter
Breakdown Voltage
(I
C
= 10
μA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
V
45
50
50
6.0
−
−
−
−
−
−
−
−
−
V
−
V
−
V
−
15
5.0
nA
μA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
μA,
V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base
−Emitter
Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base
−Emitter
Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base
−Emitter
Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
h
FE
−
−
200
−
−
−
−
580
−
150
290
−
−
0.7
0.9
660
−
−
475
0.25
0.6
−
−
700
770
V
V
mV
V
CE(sat)
V
BE(sat)
V
BE(on)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
−
−
10
100
−
−
−
−
4.5
MHz
pF
dB
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BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (PNP)
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
μA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
Collector Cutoff Current (V
CB
=
−30
V)
Collector Cutoff Current
(V
CB
=
−30
V, T
A
= 150°C)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
V
−45
−50
−50
−5.0
−
−
−
−
−
−
−
−
−
V
−
V
−
V
−
−15
−4.0
nA
μA
−
−
200
−
−
−
−
−0.6
−
150
290
−
−
−0.7
−0.9
−
−
−
475
V
−0.3
−0.65
V
−
−
V
−0.75
−0.82
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
μA,
V
CE
=
−5.0
V)
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mA, V
CE
=
−5.0
Vdc, R
S
= 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
f
T
C
ob
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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BC847BPDXV6, SBC847BPDXV6
TYPICAL NPN CHARACTERISTICS
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
2.0
5.0 10
1.0
20
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current−Gain
−
Bandwidth Product
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4
BC847BPDXV6, SBC847BPDXV6
TYPICAL PNP CHARACTERISTICS
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 9. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 10. Base−Emitter Temperature
Coefficient
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain
−
Bandwidth Product
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