IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
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©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
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Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV34-600
Dual rectifier diode ultrafast
Rev. 01 — 4 October 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT78 (TO-220AB) plastic
package.
1.2 Features
I
Fast switching
I
Soft recovery characteristic
I
Low switching loss
I
Low thermal resistance
I
Low forward voltage drop
I
High thermal cycling performance
1.3 Applications
I
Output rectifiers in high frequency
switched-mode power supplies
I
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
≤
1.16 V
I
I
O(AV)
≤
20 A
I
t
rr
≤
60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
anode 1
cathode
anode 2
mounting base; cathode
mb
1
2
sym084
Simplified outline
Symbol
3
1 2 3
SOT78 (3-lead TO-220AB)
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYV34-600
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
square waveform;
δ
= 1.0;
T
mb
≤
138
°C
square waveform;
δ
= 0.5;
T
mb
≤
107
°C;
both diodes conducting
t = 25
µs;
square waveform;
δ
= 0.5;
T
mb
≤
107
°C;
per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
600
20
20
120
132
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
with heatsink compound;
per diode; see
Figure 1
with heatsink compound;
both diodes conducting
R
th(j-a)
thermal resistance from junction to ambient in free air
Min
-
-
-
Typ
-
-
60
Max
2.4
1.6
-
Unit
K/W
K/W
K/W
BYV34-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2007
2 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
10
Z
th(j-mb)
(K/W)
1
001aag912
10
−1
P
δ
=
t
p
T
10
−2
t
p
T
t
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 10 A; T
j
= 150
°C;
see
Figure 2
I
F
= 20 A; see
Figure 2
V
R
= 600 V
V
R
= 600 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
I
RM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
I
F
= 2 A to V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
Figure 3
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs; see
Figure 3
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100
°C;
see
Figure 3
I
F
= 10 A; dI
F
/dt = 10 A/µs;
see
Figure 4
-
-
-
40
50
3
70
60
5
nC
ns
A
Min
-
-
-
-
Typ
0.92
1.07
10
0.2
Max
1.16
1.48
50
0.6
Unit
V
V
µA
mA
Static characteristics
V
FR
-
3.2
-
V
BYV34-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2007
3 of 9
NXP Semiconductors
BYV34-600
Dual rectifier diode ultrafast
30
I
F
(A)
25
003aab485
20
15
10
(1)
(2)
(3)
5
0
0
0.4
0.8
1.2
V
F
(V)
1.6
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2. Forward current as a function of forward voltage
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
BYV34-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2007
4 of 9
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