FSX017LG
General Purpose GaAs FET
FEATURES
• Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz
• High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz
• Proven Reliability
• Cost Effective Hermetic Microstrip Package
• Tape and Reel Available
DESCRIPTION
The FSX017LG is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
For reliable operation of this FET:
1. The drain - source operating voltage (VDS) should not exceed 4 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Rating
8
-5
220
-65 to +175
175
Unit
V
V
mW
°C
°C
Note
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Thermal Resistance
CASE STYLE:
LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Rth
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 27mA
VDS = 3V, IDS = 2.7mA
IGS = -2.7µA
VDS = 4V
IDS
=
30mA
f = 12GHz
Channel to Case
Min.
35
-
-0.7
-5
15.0
7.0
-
Limit
Typ. Max.
55
50
-1.2
-
16.0
8.0
300
75
-
-1.7
-
-
-
400
Unit
mA
mS
V
V
dBm
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1
FSX017LG
General Purpose GaAs FET
Case Style "LG"
Metal-Ceramic Hermetic Package
4.78±0.5
1.5±0.3
(0.059)
1.78±0.15 1.5±0.3
(0.07)
(0.059)
1.5±0.3
(0.059)
1.0
(0.039)
1
1.78±0.15 1.5±0.3
(0.07)
(0.059)
4.78±0.5
4
3
2
0.5
(0.02)
1.3 Max
(0.051)
1.
2.
3.
4.
0.1
(0.004)
Gate
Source
Drain
Source
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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