TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 20 A |
| Collector-emitter maximum voltage | 55 V |
| Configuration | SINGLE |
| highest frequency band | HIGH FREQUENCY BAND |
| JESD-30 code | O-CRFM-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 175 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |