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2SC2652

Description
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
CategoryDiscrete semiconductor    The transistor   
File Size158KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC2652 Overview

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2652 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Reach Compliance Codeunknow
Maximum collector current (IC)20 A
Collector-emitter maximum voltage55 V
ConfigurationSINGLE
highest frequency bandHIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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