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3DD13005A

Description
NPN SILICON TRANSISTOR
File Size28KB,1 Pages
ManufacturerETC
Download Datasheet View All

3DD13005A Overview

NPN SILICON TRANSISTOR

广州金永利电子有限公司
A1
█ 主要用途
高压快速开关
NPN
SILICON
TRANSISTOR
对应½外型号
3DD13005A
13005A
█ 外½图及引脚排列
█ 极限值
(T
a
=25℃)
T
stg
——贮存温度…………………………………
-55~150℃
T
j
——结温……………………………………………
150℃
P
C
——集电极功率耗散
c
=25℃)
(T
…………………………
70W
V
CBO
——集电极—基极电压………………………………
700V
V
CEO
——集电极—发射极电压……………………………
400V
V
EBO
——发射极—基极电压…………………………………
9V
I
C
——集电极电流
(DC)
………………………………………
4A
I
C
——集电极电流(脉冲)……………………………………
8A
I
B
——基极电流……………………………………………
2A
TO-220
1―基
极,B
2―集电极,C
3―发射极,E
█ 电参数
(T
a
=25℃)
参数符号
BV
CEO(sus)
I
EBO
h
FE
*
最小值
400
典型值
最大值
单 ½
V
集电极—发射极维持电压
发射极—基极截止电流
直流电流增益
*
I
C
=10mA, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
1
10
8
40
40
0.5
0.6
1
mA
V
CE(sat)
集电极—发射极饱和电压
*
V
v
V
V
V
pF
MHz
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CB
=10V, f=0.1MHz
V
CE
=10V, I
C
=0.5A
V
BE(sat)
基极—发射极饱和电压
*
1.2
1.6
C
ob
f
T
t
on
t
s
t
f
共基极输出电容
特征频率
导通时间
½½流子贮存时间
下降时间
4
65
0.8
4
0.9
μs
μs
μs
V
CC
=125V, I
C
=2A,
I
B1
=-I
B2
=0.4A
分档:H1(10--16)
H2(14--21) H3(19--26) H4(24--31) H5(29--40)
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