TO-220AB datasheet, PDF - EEWORLD Datasheet

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TO-220AB: DescriptionN-Channel Power Field Effect Transistor; File Size73KB，6 Pages; ManufacturerHSMC; Websitehttp://www.hsmc.com.tw/

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TO-220AB Overview

N-Channel Power Field Effect Transistor

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200402

Issued Date : 2004.04.01

Revised Date : 2005.03.10

Page No. : 1/6

H06N60 Series

N-Channel Power Field Effect Transistor

H06N60 Series Pin Assignment

Tab

Description

Tab

3-Lead Plastic

TO-263

Package Code: U

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

3-Lead Plastic

TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Features

•

Robust High Voltage Termination

•

Avalanc he Energy Specified

•

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast

Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

•

IDSS and V

DS(on)

Specified at Elevated Temperature

3-Lead Plastic

TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

H06N60 Series

Symbol:

Absolute Maximum Ratings

Symbol

Parameter

Drain to Current (Continuous)

Drain to Current (Pulsed)

Gate-to-Source Voltage (Continue)

Total Power Dissipation (T

=25

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

Derate above 25

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

Operating Temperature Range

Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25

=100V, V

=10V, I

=6A, L=10mH, R

=25Ω)

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

Value

±20

110

0.58

0.33

-55 to 150

250

260

Units

W/°C

stg

°C

Note: 1. V

=50V, I

=10A

2. Pulse Width and frequency is limited by T

j(max)

and thermal response

H06N60U, H06N60E, H06N60F

HSMC Product Specification

TO-220AB Related Products

	TO-220AB	H06N60	TO-220FP	TO-263
Description	N-Channel Power Field Effect Transistor	N-Channel Power Field Effect Transistor	N-Channel Power Field Effect Transistor	N-Channel Power Field Effect Transistor

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