EEWORLDEEWORLDEEWORLD

Part Number

Search

TO-220FP

Description
N-Channel Power Field Effect Transistor
File Size73KB,6 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Compare View All

TO-220FP Overview

N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
H06N60 Series
N-Channel Power Field Effect Transistor
H06N60 Series Pin Assignment
Tab
3
Description
Tab
2
1
3-Lead Plastic
TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
1
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and V
DS(on)
Specified at Elevated Temperature
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
D
G
S
H06N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Derate above 25
O
C
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Operating Temperature Range
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
O
C
(V
DD
=100V, V
GS
=10V, I
L
=6A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
6
24
±20
110
110
40
0.58
0.58
0.33
-55 to 150
-55 to 150
250
260
Units
A
A
V
W
W
W
W/°C
W/°C
W/
o
C
O
O
P
D
T
j
T
stg
E
AS
T
L
C
C
mJ
°C
Note: 1. V
DD
=50V, I
D
=10A
2. Pulse Width and frequency is limited by T
j(max)
and thermal response
H06N60U, H06N60E, H06N60F
HSMC Product Specification

TO-220FP Related Products

TO-220FP H06N60 TO-220AB TO-263
Description N-Channel Power Field Effect Transistor N-Channel Power Field Effect Transistor N-Channel Power Field Effect Transistor N-Channel Power Field Effect Transistor
New version of WEBENCH user guide
[size=4] WEBENCH Power Designer is an online design tool that helps you select, design, and compare power supply designs as needed. Powerful and easy to use, WEBENCH Power Designer guides you through ...
qwqwqw2088 Analogue and Mixed Signal
MCU software or platform
What software or platform should be used in the process of learning microcontrollers or microcontroller design....
xiongjunfeng Embedded System
To convert AC to DC, you need to increase the voltage
Dear experts: Does anyone know how to convert 0.02 V AC into 0.5 V DC? How should the circuit be designed? Can you tell me about it? Thank you all!!! Thank you so much!!!...
JUNLEBAO Analog electronics
Regarding the problem of sources.cmn file and two assembly instructions.
How is the sources.cmn file under the bsp package generated? Does it need to be generated manually? What is the relationship between it and the bsp.pbcxml file in the catalog? I modified the bsp.pbcxm...
我上一谁呢 Embedded System
Programming toys are just becoming popular now.
Programming toys are just becoming popular now. Do they have development potential? What is the cost? How to control it? :pleased:...
maoshen Talking
Zhou Gong tried to organize a summer camp activity
[i=s]This post was last edited by paulhyde on 2014-9-15 09:31[/i] We are going to organize a summer camp for junior students majoring in electrical engineering this summer. The target universities are...
wonderto Electronics Design Contest

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2211  217  636  998  1692  45  5  13  21  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号