HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
H06N60 Series
N-Channel Power Field Effect Transistor
H06N60 Series Pin Assignment
Tab
3
Description
Tab
2
1
3-Lead Plastic
TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
1
Features
•
Robust High Voltage Termination
•
Avalanc he Energy Specified
•
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
IDSS and V
DS(on)
Specified at Elevated Temperature
1
2
3
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
D
G
S
H06N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Derate above 25
O
C
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Operating Temperature Range
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
O
C
(V
DD
=100V, V
GS
=10V, I
L
=6A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
6
24
±20
110
110
40
0.58
0.58
0.33
-55 to 150
-55 to 150
250
260
Units
A
A
V
W
W
W
W/°C
W/°C
W/
o
C
O
O
P
D
T
j
T
stg
E
AS
T
L
C
C
mJ
°C
Note: 1. V
DD
=50V, I
D
=10A
2. Pulse Width and frequency is limited by T
j(max)
and thermal response
H06N60U, H06N60E, H06N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Rθ
JC
Rθ
JA
Parameter
TO-263
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
TO-220AB
TO-220FP
62
Value
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
Units
1.7
1.7
3.3
O
O
C/W
C/W
ELectrical Characteristics
(T
J
=25
O
C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V, T
j
=125
O
C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.6A)*
Forward Transconductance (V
DS
=15V, I
D
=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
(V
DD
=300V, I
D
=6A, R
G
=9.1Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
-
-
-
-
2
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
3
1
4
1498
158
29
14
19
40
26
35.5
8.1
14.1
4.5
7.5
Max.
-
1
50
100
-100
4
1.2
-
-
-
-
-
-
-
-
50
-
-
-
-
nH
nH
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
S
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
Characteristic
I
S
=6A, V
GS
=0V, T
J
=25
o
C
I
S
=6A, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
**
266
Max.
1.2
-
-
Units
V
ns
ns
**: Negligible, Dominated by circuit inductance
H06N60U, H06N60E, H06N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
1.6
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
Typical On-Resistance & Drain Current
Drain-Source On-Resistance-R
DS(ON)
V
GS
=10V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
=10V
9
ID, Drain-Source Current (A)
.
8
7
V
GS
=8V
V
GS
=6V
6
5
V
GS
=5V
4
3
2
1
0
0
2
4
6
8
10
V
GS
=4
0
1
2
3
4
5
6
7
8
9
10
11
12
VDS, Drain-Source Voltage(V)
Drain Current-I
D
(A)
Drain Current Variation with Gate Voltage &
Temperature
6
V
DS
=10 V
5
Typical On-Resistance & Drain Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
Tc= 25°C
4
Drain-Source On-Resistance-R
DS(ON)
Drain-Source Current-I
D
(A)
3
V
GS
=10V
V
GS
=15V
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1
2
3
4
5
6
7
8
9
10
11
12
Gate-Source Voltage-V
GS
(V)
Drain Current-I
D
(A)
On Resistance Variation with Temperature
2.50
V
GS
=10 V
Capacitance Characteristics
2000
Normalized Drain-Source On-
Resistance-R
DS(ON)
2.00
1500
Capacitance (pF)
Ciss
Coss
Crss
500
1.50
I
D
=3A
1000
1.00
0.50
0.00
0
25
50
75
100
o
Case Temperature-Tc ( C)
125
150
0
0.1
1
10
100
V
DS
, Deain-Source Voltage (V)
H06N60U, H06N60E, H06N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
F
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 4/6
E
0 6N60
Date Code
Control Code
H
I
G
Tab
P
L
J
M
3
2
1
O
N
K
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
-
-
3.00
0.75
2.54
1.14
-
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α
1
D
α
4
E O
C
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H
F
0 6N60
Date Code
Control Code
α
2
α
3
α
5
I
N
3
G
J
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
F
2
K
1
M
L
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
-
α1/2/4/5
-
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5
o
*27
o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
H06N60U, H06N60E, H06N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-263 Dimension
Marking:
A
a1
G
C
D
r1
1
H
2
3
F
P
Q
E
R
r2
I
K
2-r2
a2
J
K
a2
a3
S
O
E
N
r2
F
B
a2
DP
3-r2
L
M
X
Y
2Xr3
W
D
T
U
V
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 5/6
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
U
0 6N6 0
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
T
3-Lead TO-263 Plastic
Surface Mount Package
HSMC Package Code: U
( ): Reference Dimension, Unit: mm
DIM
A
B
C
D
E
F
G
H
I
J
K
Min.
9.70
1.00
-
9.00
4.70
15.00
-
1.20
1.17
0.70
2.34
Max.
10.10
1.40
(4.60)
9.40
5.10
15.60
(0.40)
1.60
1.37
0.90
2.74
DIM
L
M
N
O
P
Q
R
S
T
U
V
Max.
4.30
1.25
-0.05
2.20
1.90
-
2.24
0.45
9.80
-
-
Max.
4.70
1.40
0.25
2.60
2.10
(0.75)
2.84
0.60
10.20
(7.00)
(4.00)
DIM
W
X
Y
a1
a2
a3
r1
r2
r3
DP
Min.
-
-
-
-
-
-
-
-
-
-
Max.
(7.20)
(0.40)
(0.90)
(15
o
)
(3
o
)
0
o
~3
o
(φ1.50)
0.30
(0.45)
(0.20)
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H06N60U, H06N60E, H06N60F
HSMC Product Specification
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