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APT50GT60BRDQ1G

Description
Thunderbolt IGBT
CategoryDiscrete semiconductor    The transistor   
File Size430KB,9 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

APT50GT60BRDQ1G Overview

Thunderbolt IGBT

APT50GT60BRDQ1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerADPOW
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)110 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)365 ns
Nominal on time (ton)46 ns
TYPICAL PERFORMANCE CURVES
®
APT50GT60BRDQ1
APT50GT60BRDQ1G*
APT50GT60BRDQ1(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT
®
The Thunderblot IGBT
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
®
offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 100KHz
• Ultra Low Leakage Current
G
TO
-2
47
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
7
All Ratings: T
C
= 25°C unless otherwise specified.
APT50GT60BRDQ1(G)
UNIT
Volts
600
±30
@ T
C
= 25°C
110
52
150
150A @ 600V
446
-55 to 150
300
Watts
°C
Amps
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 2mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
3
1.7
4
2.0
2.2
25
2
5
2.5
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
µA
nA
11-2005
052-6281
Rev A
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
TBD
120
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT50GT60BRDQ1G Related Products

APT50GT60BRDQ1G APT50GT60BRDQ1
Description Thunderbolt IGBT Thunderbolt IGBT
Is it Rohs certified? conform to incompatible
Maker ADPOW ADPOW
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 110 A 110 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 code TO-247 TO-247
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 365 ns 365 ns
Nominal on time (ton) 46 ns 46 ns
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