APM2054NV
N-Channel Enhancement Mode MOSFET
Features
•
20V/5A,
R
DS(ON)
= 35mΩ (typ.) @ V
GS
= 10V
R
DS(ON)
= 45m
Ω
(typ.) @ V
GS
= 4.5V
R
DS(ON)
= 110m
Ω
(typ.) @ V
GS
= 2.5V
Pin Description
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-223
(2)
D
Applications
•
•
Switching Regulators
Switching Converters
(1)
G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
APM2054N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
V : SOT-223
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM2054N V :
APM2054N
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
1
www.anpec.com.tw
APM2054NV
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation for Single Operation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=10V
Rating
20
±16
5
20
3
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Parameter
Test Condition
APM2054NV
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=5A
20
1
30
0.6
0.9
35
45
110
0.85
1.5
±100
40
54
130
1.3
V
µA
V
nA
mΩ
R
DS(ON) a
Drain-Source On-state Resistance
V
SD a
Diode Forward Voltage
V
GS
=4.5V, I
DS
=3.5A
V
GS
=2.5V, I
DS
=2.5A
I
SD
=3A, V
GS
=0V
V
Gate Charge Characteristics
b
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
11
3.8
5.2
13
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
2
www.anpec.com.tw
APM2054NV
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2054NV
Min.
Typ.
Max.
Unit
Dynamic Characteristics
b
t
d(ON)
T
r
t
d(OFF)
T
f
R
G
C
iss
C
oss
C
rss
Notes:
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
V
DD
=10V, R
L
=10
Ω
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
7
15
19
6
2.5
450
100
60
10
25
26
7
Ω
pF
ns
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
3
www.anpec.com.tw
APM2054NV
Typical Characteristics
Power Dissipation
1.6
1.4
1.2
Drain Current
6
5
I
D
- Drain Current (A)
P
tot
- Power (W)
4
1.0
0.8
0.6
0.4
0.2
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
3
2
1
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2
1
Thermal Transient Impedance
Duty = 0.5
I
D
- Drain Current (A)
10
it
im
)L
(on
ds
R
0.2
0.1
300
µ
s
1ms
0.1
0.02
0.01
0.05
1
10ms
100ms
1s
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
:85 C/W
2
0.1
DC
T =25 C
0.01
A
0.1
o
1
10
60
1E-3
1E-4 1E-3 0.01
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
4
www.anpec.com.tw
APM2054NV
Typical Characteristics (Cont.)
Output Characteristics
20
18
16
V
GS
= 4, 5, 6, 7, 8, 9, 10V
140
160
V
GS
=2.5V
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
120
100
80
60
40
20
0
I
D
- Drain Current (A)
14
12
10
8
6
4
2
0
0
2
4
2V
6
8
10
3V
V
GS
=4.5V
V
GS
=10V
0
4
8
12
16
20
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
20
18
16
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
Normalized Threshold Vlotage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
D
- Drain Current (A)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
T
j
=25 C
o
T
j
=125 C
T
j
=-55 C
o
o
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
5
www.anpec.com.tw
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